Abstract
State-of-the-art green emission efficiency is achieved with CdMgZnSe color-converting heterostructures. A unique dark-line defect formation mechanism is revealed in CdMgZnSe green converters. Stacking faults extend horizontally inside the Mg-rich window layers, and partial dislocations associated with stacking faults give rise to dark lines. Such a mechanism indicates the low stacking-fault energy of the MgSe-containing alloys and suggests that, in addition to misfit strain, Mg content also plays an important role in defect formation in II-VI semiconductors.
Original language | English |
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Pages (from-to) | 568-571 |
Number of pages | 4 |
Journal | Scripta Materialia |
Volume | 64 |
Issue number | 6 |
DOIs | |
Publication status | Published - 1 Mar 2011 |
Externally published | Yes |
Keywords
- Defect
- Dislocation
- Molecular beam epitaxy
- Semiconductor devices
- Transmission electron microscopy
ASJC Scopus subject areas
- General Materials Science
- Condensed Matter Physics