Effects of Mg content on dark-line defects in II-VI green converters

Ye Zhu, J. Xie, T. J. Miller, M. A. Haase, X. Sun, S. McKernan, T. L. Smith, C. A. Leatherdale

Research output: Journal article publicationJournal articleAcademic researchpeer-review

Abstract

State-of-the-art green emission efficiency is achieved with CdMgZnSe color-converting heterostructures. A unique dark-line defect formation mechanism is revealed in CdMgZnSe green converters. Stacking faults extend horizontally inside the Mg-rich window layers, and partial dislocations associated with stacking faults give rise to dark lines. Such a mechanism indicates the low stacking-fault energy of the MgSe-containing alloys and suggests that, in addition to misfit strain, Mg content also plays an important role in defect formation in II-VI semiconductors.
Original languageEnglish
Pages (from-to)568-571
Number of pages4
JournalScripta Materialia
Volume64
Issue number6
DOIs
Publication statusPublished - 1 Mar 2011
Externally publishedYes

Keywords

  • Defect
  • Dislocation
  • Molecular beam epitaxy
  • Semiconductor devices
  • Transmission electron microscopy

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics

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