Effects of Metal-Hydroxyl and InOx Defects on Performance of InGaZnO Thin-Film Transistor

X. D. Huang; Y. Ma; J. Q. Song; P. T. Lai; W. M. Tang

doi:10.1109/TED.2018.2797073

Effects of Metal-Hydroxyl and InO_x Defects on Performance of InGaZnO Thin-Film Transistor

X. D. Huang, Y. Ma, J. Q. Song, P. T. Lai, W. M. Tang

Research output: Journal article publication › Journal article › Academic research › peer-review

11 Citations (Scopus)

Abstract

The properties of metal-hydroxyl (M-OH) and InO_x defects in InGaZnO (IGZO) and their influences on the performance of IGZO thin-film transistor (TFT) are investigated. The defects in the IGZO film are intentionally modulated by using various postmetallization-Annealing (PMA) treatments. PMA is effective to densify the IGZO film and thus suppress the formation of M-OH. On the other hand, the PMA also leads to the formation of InO_x near the edge of conduction channel. It is found that M-OH acts as deep-level acceptor like trap and has a heavy influence on the off-current, threshold voltage, and subthreshold swing of the TFT. On the other hand, InO_x acts as shallow-level donor and mainly affects the carrier mobility of the TFT. The effects of M-OH and InO_x on the TFT performance decrease and increase, respectively, with decreasing the channel length.

Original language	English
Pages (from-to)	1009-1013
Number of pages	5
Journal	IEEE Transactions on Electron Devices
Volume	65
Issue number	3
DOIs	https://doi.org/10.1109/TED.2018.2797073
Publication status	Published - 1 Mar 2018

Keywords

InGaZnO (IGZO)
InO
metal-hydroxyl (M-OH)
postmetallization annealing (PMA)
thin-film transistor (TFT)

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

More information

10.1109/TED.2018.2797073

Cite this

@article{1b306b33fbf5412eb6bbe348f340f13f,

title = "Effects of Metal-Hydroxyl and InOx Defects on Performance of InGaZnO Thin-Film Transistor",

abstract = "The properties of metal-hydroxyl (M-OH) and InOx defects in InGaZnO (IGZO) and their influences on the performance of IGZO thin-film transistor (TFT) are investigated. The defects in the IGZO film are intentionally modulated by using various postmetallization-Annealing (PMA) treatments. PMA is effective to densify the IGZO film and thus suppress the formation of M-OH. On the other hand, the PMA also leads to the formation of InOx near the edge of conduction channel. It is found that M-OH acts as deep-level acceptor like trap and has a heavy influence on the off-current, threshold voltage, and subthreshold swing of the TFT. On the other hand, InOx acts as shallow-level donor and mainly affects the carrier mobility of the TFT. The effects of M-OH and InOx on the TFT performance decrease and increase, respectively, with decreasing the channel length.",

keywords = "InGaZnO (IGZO), InO, metal-hydroxyl (M-OH), postmetallization annealing (PMA), thin-film transistor (TFT)",

author = "Huang, {X. D.} and Y. Ma and Song, {J. Q.} and Lai, {P. T.} and Tang, {W. M.}",

year = "2018",

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T1 - Effects of Metal-Hydroxyl and InOx Defects on Performance of InGaZnO Thin-Film Transistor

AU - Huang, X. D.

AU - Ma, Y.

AU - Song, J. Q.

AU - Lai, P. T.

AU - Tang, W. M.

PY - 2018/3/1

Y1 - 2018/3/1

N2 - The properties of metal-hydroxyl (M-OH) and InOx defects in InGaZnO (IGZO) and their influences on the performance of IGZO thin-film transistor (TFT) are investigated. The defects in the IGZO film are intentionally modulated by using various postmetallization-Annealing (PMA) treatments. PMA is effective to densify the IGZO film and thus suppress the formation of M-OH. On the other hand, the PMA also leads to the formation of InOx near the edge of conduction channel. It is found that M-OH acts as deep-level acceptor like trap and has a heavy influence on the off-current, threshold voltage, and subthreshold swing of the TFT. On the other hand, InOx acts as shallow-level donor and mainly affects the carrier mobility of the TFT. The effects of M-OH and InOx on the TFT performance decrease and increase, respectively, with decreasing the channel length.

AB - The properties of metal-hydroxyl (M-OH) and InOx defects in InGaZnO (IGZO) and their influences on the performance of IGZO thin-film transistor (TFT) are investigated. The defects in the IGZO film are intentionally modulated by using various postmetallization-Annealing (PMA) treatments. PMA is effective to densify the IGZO film and thus suppress the formation of M-OH. On the other hand, the PMA also leads to the formation of InOx near the edge of conduction channel. It is found that M-OH acts as deep-level acceptor like trap and has a heavy influence on the off-current, threshold voltage, and subthreshold swing of the TFT. On the other hand, InOx acts as shallow-level donor and mainly affects the carrier mobility of the TFT. The effects of M-OH and InOx on the TFT performance decrease and increase, respectively, with decreasing the channel length.

KW - InGaZnO (IGZO)

KW - InO

KW - metal-hydroxyl (M-OH)

KW - postmetallization annealing (PMA)

KW - thin-film transistor (TFT)

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