Effects of Metal-Hydroxyl and InOx Defects on Performance of InGaZnO Thin-Film Transistor

X. D. Huang, Y. Ma, J. Q. Song, P. T. Lai, W. M. Tang

Research output: Journal article publicationJournal articleAcademic researchpeer-review

11 Citations (Scopus)


The properties of metal-hydroxyl (M-OH) and InOx defects in InGaZnO (IGZO) and their influences on the performance of IGZO thin-film transistor (TFT) are investigated. The defects in the IGZO film are intentionally modulated by using various postmetallization-Annealing (PMA) treatments. PMA is effective to densify the IGZO film and thus suppress the formation of M-OH. On the other hand, the PMA also leads to the formation of InOx near the edge of conduction channel. It is found that M-OH acts as deep-level acceptor like trap and has a heavy influence on the off-current, threshold voltage, and subthreshold swing of the TFT. On the other hand, InOx acts as shallow-level donor and mainly affects the carrier mobility of the TFT. The effects of M-OH and InOx on the TFT performance decrease and increase, respectively, with decreasing the channel length.

Original languageEnglish
Pages (from-to)1009-1013
Number of pages5
JournalIEEE Transactions on Electron Devices
Issue number3
Publication statusPublished - 1 Mar 2018


  • InGaZnO (IGZO)
  • InO
  • metal-hydroxyl (M-OH)
  • postmetallization annealing (PMA)
  • thin-film transistor (TFT)

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering


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