Abstract
Silicon dioxide deposited by RF sputtering is used as the gate insulator of Metal-Insulator-SiC (MISiC) Schottky-diode hydrogen sensors. Sensors with different gate insulator thicknesses are fabricated for investigation. Their hydrogen-sensing properties are compared with each other by taking measurements at various temperatures and hydrogen concentrations using a computer-controlled measurement system. Experimental results show that the sensitivity of the devices is strongly related to the thickness of the insulator, and the thicker the insulator, the higher is the sensitivity.
Original language | English |
---|---|
Title of host publication | Proceedings - 4th IEEE International Symposium on Electronic Design, Test and Applications, DELTA 2008 |
Pages | 171-174 |
Number of pages | 4 |
DOIs | |
Publication status | Published - 5 Sept 2008 |
Externally published | Yes |
Event | 4th IEEE International Symposium on Electronic Design, Test and Applications, DELTA 2008 - Hong Kong, SAR, Hong Kong Duration: 23 Jan 2008 → 25 Jan 2008 |
Conference
Conference | 4th IEEE International Symposium on Electronic Design, Test and Applications, DELTA 2008 |
---|---|
Country/Territory | Hong Kong |
City | Hong Kong, SAR |
Period | 23/01/08 → 25/01/08 |
ASJC Scopus subject areas
- Computer Graphics and Computer-Aided Design
- Computer Science Applications
- Electrical and Electronic Engineering