Effects of insulator thickness on the sensing properties of MISiC Schottky-diode hydrogen sensor

Wing Man Tang, C. H. Leung, P. T. Lai

Research output: Chapter in book / Conference proceedingConference article published in proceeding or bookAcademic researchpeer-review

1 Citation (Scopus)

Abstract

Silicon dioxide deposited by RF sputtering is used as the gate insulator of Metal-Insulator-SiC (MISiC) Schottky-diode hydrogen sensors. Sensors with different gate insulator thicknesses are fabricated for investigation. Their hydrogen-sensing properties are compared with each other by taking measurements at various temperatures and hydrogen concentrations using a computer-controlled measurement system. Experimental results show that the sensitivity of the devices is strongly related to the thickness of the insulator, and the thicker the insulator, the higher is the sensitivity.
Original languageEnglish
Title of host publicationProceedings - 4th IEEE International Symposium on Electronic Design, Test and Applications, DELTA 2008
Pages171-174
Number of pages4
DOIs
Publication statusPublished - 5 Sep 2008
Externally publishedYes
Event4th IEEE International Symposium on Electronic Design, Test and Applications, DELTA 2008 - Hong Kong, SAR, Hong Kong
Duration: 23 Jan 200825 Jan 2008

Conference

Conference4th IEEE International Symposium on Electronic Design, Test and Applications, DELTA 2008
Country/TerritoryHong Kong
CityHong Kong, SAR
Period23/01/0825/01/08

ASJC Scopus subject areas

  • Computer Graphics and Computer-Aided Design
  • Computer Science Applications
  • Electrical and Electronic Engineering

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