Effects of HfO2 encapsulation on electrical performances of few-layered MoS2 transistor with ALD HfO2 as back-gate dielectric

Jingping Xu, Ming Wen, Xinyuan Zhao, Lu Liu, Xingjuan Song, Pui To Lai, Wing Man Tang

Research output: Journal article publicationJournal articleAcademic researchpeer-review

37 Citations (Scopus)

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Material Science