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Dive into the research topics of 'Effects of HfO2 encapsulation on electrical performances of few-layered MoS2 transistor with ALD HfO2 as back-gate dielectric'. Together they form a unique fingerprint.- Sort by
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Jingping Xu, Ming Wen, Xinyuan Zhao, Lu Liu, Xingjuan Song, Pui To Lai, Wing Man Tang
Research output: Journal article publication › Journal article › Academic research › peer-review