Effects of gate-insulator nitridation gas on MISiC Schottky-diode hydrogen sensors

Wing Man Tang, C. H. Leung, P. T. Lai, J. P. Xu

Research output: Chapter in book / Conference proceedingConference article published in proceeding or bookAcademic researchpeer-review

Abstract

MISiC Schottky-diode hydrogen sensors with gate insulator grown in three different nitridation gases (NO, N2O and NH3) are fabricated. Steady-state and transient-response measurements are carried out at different temperatures and hydrogen concentrations using a computer-controlled measurement system. Experimental results show that these nitrided sensors have high sensitivity and can give a rapid and stable response over a wide range of temperature. The study also finds that N2O provides the fastest insulator growth with good insulator quality, and hence the highest sensitivity among the three nitrided samples. The N2O-nitrided sensor can give significant response even at a low H2 concentration of 48-ppm H 2 in N2, indicating potential applications for detecting hydrogen leakage at high temperature. The response times of the three nitrided samples are also shorter than that of the control sample. At 300 °C, the response time of the N2O-nitrided sample to 48-ppm H2 in N2 is 11 s, while that of the control sample is 65 s.
Original languageEnglish
Title of host publication2005 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC
Pages717-720
Number of pages4
DOIs
Publication statusPublished - 1 Dec 2006
Externally publishedYes
Event2005 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC - Howloon, Hong Kong
Duration: 19 Dec 200521 Dec 2005

Conference

Conference2005 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC
Country/TerritoryHong Kong
CityHowloon
Period19/12/0521/12/05

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

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