Abstract
MISiC Schottky-diode hydrogen sensors with gate insulator grown in three different nitridation gases (NO, N2O and NH3) are fabricated. Steady-state and transient-response measurements are carried out at different temperatures and hydrogen concentrations using a computer-controlled measurement system. Experimental results show that these nitrided sensors have high sensitivity and can give a rapid and stable response over a wide range of temperature. The study also finds that N2O provides the fastest insulator growth with good insulator quality, and hence the highest sensitivity among the three nitrided samples. The N2O-nitrided sensor can give significant response even at a low H2 concentration of 48-ppm H 2 in N2, indicating potential applications for detecting hydrogen leakage at high temperature. The response times of the three nitrided samples are also shorter than that of the control sample. At 300 °C, the response time of the N2O-nitrided sample to 48-ppm H2 in N2 is 11 s, while that of the control sample is 65 s.
Original language | English |
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Title of host publication | 2005 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC |
Pages | 717-720 |
Number of pages | 4 |
DOIs | |
Publication status | Published - 1 Dec 2006 |
Externally published | Yes |
Event | 2005 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC - Howloon, Hong Kong Duration: 19 Dec 2005 → 21 Dec 2005 |
Conference
Conference | 2005 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC |
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Country/Territory | Hong Kong |
City | Howloon |
Period | 19/12/05 → 21/12/05 |
ASJC Scopus subject areas
- Electrical and Electronic Engineering
- Electronic, Optical and Magnetic Materials