Effects of gate electron concentration on organic thin-film transistors with different pentacene thicknesses

Hui Su, Wing Man Tang, Pui To Lai

Research output: Chapter in book / Conference proceedingConference article published in proceeding or bookAcademic researchpeer-review

Abstract

Bottom-gate pentacene organic thin-film transistors (OTFTs) with different gate electron concentrations and pentacene thicknesses are fabricated. The performances of the OTFTs show dependence on both gate electron concentration and pentacene thickness. Electrons in the gate electrode can reduce the effect from surface optical phonons of the high-k gate dielectric (NdTaON), and so higher gate electron concentration gives better device performance. It is also supported by measurements at 140°C, where the remote phonon scattering is enhanced. Moreover, it is found that the extracted carrier mobility decreases with increasing pentacene thickness, which is attributed to the series resistance of the source/drain electrodes.

Original languageEnglish
Title of host publication2019 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2019
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781728102863
DOIs
Publication statusPublished - 1 Jun 2019
Event2019 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2019 - Xi'an, China
Duration: 12 Jun 201914 Jun 2019

Publication series

Name2019 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2019

Conference

Conference2019 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2019
CountryChina
CityXi'an
Period12/06/1914/06/19

Keywords

  • Gate electron concentration
  • High-k gate dielectric
  • Organic thin-film transistor
  • Pentacene thickness

ASJC Scopus subject areas

  • Signal Processing
  • Electrical and Electronic Engineering
  • Instrumentation

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