TY - GEN
T1 - Effects of gate electron concentration on organic thin-film transistors with different pentacene thicknesses
AU - Su, Hui
AU - Tang, Wing Man
AU - Lai, Pui To
PY - 2019/6/1
Y1 - 2019/6/1
N2 - Bottom-gate pentacene organic thin-film transistors (OTFTs) with different gate electron concentrations and pentacene thicknesses are fabricated. The performances of the OTFTs show dependence on both gate electron concentration and pentacene thickness. Electrons in the gate electrode can reduce the effect from surface optical phonons of the high-k gate dielectric (NdTaON), and so higher gate electron concentration gives better device performance. It is also supported by measurements at 140°C, where the remote phonon scattering is enhanced. Moreover, it is found that the extracted carrier mobility decreases with increasing pentacene thickness, which is attributed to the series resistance of the source/drain electrodes.
AB - Bottom-gate pentacene organic thin-film transistors (OTFTs) with different gate electron concentrations and pentacene thicknesses are fabricated. The performances of the OTFTs show dependence on both gate electron concentration and pentacene thickness. Electrons in the gate electrode can reduce the effect from surface optical phonons of the high-k gate dielectric (NdTaON), and so higher gate electron concentration gives better device performance. It is also supported by measurements at 140°C, where the remote phonon scattering is enhanced. Moreover, it is found that the extracted carrier mobility decreases with increasing pentacene thickness, which is attributed to the series resistance of the source/drain electrodes.
KW - Gate electron concentration
KW - High-k gate dielectric
KW - Organic thin-film transistor
KW - Pentacene thickness
UR - http://www.scopus.com/inward/record.url?scp=85069467551&partnerID=8YFLogxK
U2 - 10.1109/EDSSC.2019.8753965
DO - 10.1109/EDSSC.2019.8753965
M3 - Conference article published in proceeding or book
T3 - 2019 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2019
BT - 2019 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2019
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 2019 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2019
Y2 - 12 June 2019 through 14 June 2019
ER -