Effects of forming gas annealing on the memory characteristics of Ge nanocrystals embedded in LaAlO3high-k dielectrics for flash memory device application

X. B. Lu, P. F. Lee, J. Y. Dai

Research output: Journal article publicationJournal articleAcademic researchpeer-review

12 Citations (Scopus)

Abstract

Forming gas (FG) annealing effects of a nonvolatile flash memory structure using Ge nanocrystals (NCs) floating gate embedded in LaAlO3high-k tunneling/control oxide were studied. Atomic force microscopy and high-resolution transmission electron microscopy measurements revealed that the pulsed-laser deposited Ge NCs were well self-organized and the average diameter of the sphere-like NCs was around 6 nm. By using a double sweep capacitance-voltage measurement, memory windows of 1.4 and 1.0 V were obtained for the as-deposited and FG annealed samples, respectively. The charge loss rate of the FG annealed sample was lower than that of the as-deposited sample, and this could be explained by the decrease of defects in the dielectrics and Ge NCs as well as their interfacial states that may have acted as charge leak channels.
Original languageEnglish
Pages (from-to)182-186
Number of pages5
JournalThin Solid Films
Volume513
Issue number1-2
DOIs
Publication statusPublished - 14 Aug 2006

Keywords

  • Annealing
  • Floating gate memory
  • Germanium
  • High-k dielectric
  • Lanthanide aluminium oxide
  • Nanocrystals

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

Cite this