Effects of fluorine plasma and ammonia annealing on pentacene thin-film transistor with HfTiO as gate dielectric

C. Y. Han; C. H. Leung; P. T. Lai; Wing Man Tang; C. M. Che

doi:10.1109/EDSSC.2013.6628118

Effects of fluorine plasma and ammonia annealing on pentacene thin-film transistor with HfTiO as gate dielectric

C. Y. Han, C. H. Leung, P. T. Lai, Wing Man Tang, C. M. Che

Research output: Chapter in book / Conference proceeding › Conference article published in proceeding or book › Academic research › peer-review

1 Citation (Scopus)

Abstract

Pentacene organic thin-film transistor (OTFT) with high-κ HfTiO gate dielectric has been fabricated. The effects of fluorine plasma and ammonia annealing on the properties of the OTFT have been studied. After treating the dielectric in the plasma, the carrier mobility of the transistor can be improved by about 5 times to 0.0883 cm2/V·s. Moreover, the fluorine plasma treatment can shift the threshold voltage of the device in the positive direction. Experimental results also show that NH3 annealing can enhance the OTFT performance in terms of higher mobility, smaller sub-threshold slope and larger on/off ratio.

Original language	English
Title of host publication	2013 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2013
DOIs	https://doi.org/10.1109/EDSSC.2013.6628118
Publication status	Published - 23 Dec 2013
Event	2013 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2013 - Hong Kong, Hong Kong Duration: 3 Jun 2013 → 5 Jun 2013

Conference

Conference	2013 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2013
Country/Territory	Hong Kong
City	Hong Kong
Period	3/06/13 → 5/06/13

Keywords

dielectric
HfTiO
high k
OTFT

ASJC Scopus subject areas

Hardware and Architecture
Electrical and Electronic Engineering

More information

10.1109/EDSSC.2013.6628118

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@inproceedings{4b157f0dd9494f52bf6c1aba1c920499,

title = "Effects of fluorine plasma and ammonia annealing on pentacene thin-film transistor with HfTiO as gate dielectric",

abstract = "Pentacene organic thin-film transistor (OTFT) with high-κ HfTiO gate dielectric has been fabricated. The effects of fluorine plasma and ammonia annealing on the properties of the OTFT have been studied. After treating the dielectric in the plasma, the carrier mobility of the transistor can be improved by about 5 times to 0.0883 cm2/V·s. Moreover, the fluorine plasma treatment can shift the threshold voltage of the device in the positive direction. Experimental results also show that NH3 annealing can enhance the OTFT performance in terms of higher mobility, smaller sub-threshold slope and larger on/off ratio.",

keywords = "dielectric, HfTiO, high k, OTFT",

author = "Han, {C. Y.} and Leung, {C. H.} and Lai, {P. T.} and Tang, {Wing Man} and Che, {C. M.}",

year = "2013",

month = dec,

day = "23",

doi = "10.1109/EDSSC.2013.6628118",

language = "English",

isbn = "9781467325233",

booktitle = "2013 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2013",

note = "2013 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2013 ; Conference date: 03-06-2013 Through 05-06-2013",

}

Han, CY, Leung, CH, Lai, PT, Tang, WM & Che, CM 2013, Effects of fluorine plasma and ammonia annealing on pentacene thin-film transistor with HfTiO as gate dielectric. in 2013 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2013., 6628118, 2013 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2013, Hong Kong, Hong Kong, 3/06/13. https://doi.org/10.1109/EDSSC.2013.6628118

Effects of fluorine plasma and ammonia annealing on pentacene thin-film transistor with HfTiO as gate dielectric. / Han, C. Y.; Leung, C. H.; Lai, P. T. et al.
2013 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2013. 2013. 6628118.

Research output: Chapter in book / Conference proceeding › Conference article published in proceeding or book › Academic research › peer-review

TY - GEN

T1 - Effects of fluorine plasma and ammonia annealing on pentacene thin-film transistor with HfTiO as gate dielectric

AU - Han, C. Y.

AU - Leung, C. H.

AU - Lai, P. T.

AU - Tang, Wing Man

AU - Che, C. M.

PY - 2013/12/23

Y1 - 2013/12/23

N2 - Pentacene organic thin-film transistor (OTFT) with high-κ HfTiO gate dielectric has been fabricated. The effects of fluorine plasma and ammonia annealing on the properties of the OTFT have been studied. After treating the dielectric in the plasma, the carrier mobility of the transistor can be improved by about 5 times to 0.0883 cm2/V·s. Moreover, the fluorine plasma treatment can shift the threshold voltage of the device in the positive direction. Experimental results also show that NH3 annealing can enhance the OTFT performance in terms of higher mobility, smaller sub-threshold slope and larger on/off ratio.

AB - Pentacene organic thin-film transistor (OTFT) with high-κ HfTiO gate dielectric has been fabricated. The effects of fluorine plasma and ammonia annealing on the properties of the OTFT have been studied. After treating the dielectric in the plasma, the carrier mobility of the transistor can be improved by about 5 times to 0.0883 cm2/V·s. Moreover, the fluorine plasma treatment can shift the threshold voltage of the device in the positive direction. Experimental results also show that NH3 annealing can enhance the OTFT performance in terms of higher mobility, smaller sub-threshold slope and larger on/off ratio.

KW - dielectric

KW - HfTiO

KW - high k

KW - OTFT

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U2 - 10.1109/EDSSC.2013.6628118

DO - 10.1109/EDSSC.2013.6628118

M3 - Conference article published in proceeding or book

SN - 9781467325233

BT - 2013 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2013

T2 - 2013 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2013

Y2 - 3 June 2013 through 5 June 2013

ER -

Effects of fluorine plasma and ammonia annealing on pentacene thin-film transistor with HfTiO as gate dielectric

Abstract

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Keywords

ASJC Scopus subject areas

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