Effects of first rapid thermal annealing temperature on Co silicide formation

H. J. Peng; Z. X. Shen; E. H. Lim; C. W. Lai; R. Liu; A. T.S. Wee; A. Sameer; Jiyan Dai; B. C. Zhang; J. Z. Zheng

doi:10.1016/S0038-1101(03)00008-X

Effects of first rapid thermal annealing temperature on Co silicide formation

H. J. Peng
, Z. X. Shen
, E. H. Lim
, C. W. Lai
, R. Liu
, A. T.S. Wee
, A. Sameer
, Jiyan Dai
, B. C. Zhang
, J. Z. Zheng

Research output: Journal article publication › Journal article › Academic research › peer-review

5 Citations (Scopus)

Abstract

Cobalt silicide formation has been shown to be improved by a reactive Ti capping layer. We investigated the effects of the first rapid thermal anneal (RTA1) temperature on the silicidation mechanism and CoSi2film properties. It was found that a higher RTA1 temperature results in lower sheet resistance, a smoother CoSi2/Si interface and better film thermal stability. The improved thermal stability may be explained by the smoother CoSi2/Si interface at higher RTA1 temperature.

Original language	English
Pages (from-to)	1249-1253
Number of pages	5
Journal	Solid-State Electronics
Volume	47
Issue number	8
DOIs	https://doi.org/10.1016/S0038-1101(03)00008-X
Publication status	Published - 1 Aug 2003
Externally published	Yes

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

More information

10.1016/S0038-1101(03)00008-X

Cite this

@article{0475bdd882184f3f9bbacfdaaeb4e5d8,

title = "Effects of first rapid thermal annealing temperature on Co silicide formation",

abstract = "Cobalt silicide formation has been shown to be improved by a reactive Ti capping layer. We investigated the effects of the first rapid thermal anneal (RTA1) temperature on the silicidation mechanism and CoSi2film properties. It was found that a higher RTA1 temperature results in lower sheet resistance, a smoother CoSi2/Si interface and better film thermal stability. The improved thermal stability may be explained by the smoother CoSi2/Si interface at higher RTA1 temperature.",

author = "Peng, \{H. J.\} and Shen, \{Z. X.\} and Lim, \{E. H.\} and Lai, \{C. W.\} and R. Liu and Wee, \{A. T.S.\} and A. Sameer and Jiyan Dai and Zhang, \{B. C.\} and Zheng, \{J. Z.\}",

year = "2003",

month = aug,

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doi = "10.1016/S0038-1101(03)00008-X",

language = "English",

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TY - JOUR

T1 - Effects of first rapid thermal annealing temperature on Co silicide formation

AU - Peng, H. J.

AU - Shen, Z. X.

AU - Lim, E. H.

AU - Lai, C. W.

AU - Liu, R.

AU - Wee, A. T.S.

AU - Sameer, A.

AU - Dai, Jiyan

AU - Zhang, B. C.

AU - Zheng, J. Z.

PY - 2003/8/1

Y1 - 2003/8/1

N2 - Cobalt silicide formation has been shown to be improved by a reactive Ti capping layer. We investigated the effects of the first rapid thermal anneal (RTA1) temperature on the silicidation mechanism and CoSi2film properties. It was found that a higher RTA1 temperature results in lower sheet resistance, a smoother CoSi2/Si interface and better film thermal stability. The improved thermal stability may be explained by the smoother CoSi2/Si interface at higher RTA1 temperature.

AB - Cobalt silicide formation has been shown to be improved by a reactive Ti capping layer. We investigated the effects of the first rapid thermal anneal (RTA1) temperature on the silicidation mechanism and CoSi2film properties. It was found that a higher RTA1 temperature results in lower sheet resistance, a smoother CoSi2/Si interface and better film thermal stability. The improved thermal stability may be explained by the smoother CoSi2/Si interface at higher RTA1 temperature.

UR - https://www.scopus.com/pages/publications/0038612804

U2 - 10.1016/S0038-1101(03)00008-X

DO - 10.1016/S0038-1101(03)00008-X

M3 - Journal article

SN - 0038-1101

VL - 47

SP - 1249

EP - 1253

JO - Solid-State Electronics

JF - Solid-State Electronics

IS - 8

ER -

Effects of first rapid thermal annealing temperature on Co silicide formation

Abstract

ASJC Scopus subject areas

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