Cobalt silicide formation has been shown to be improved by a reactive Ti capping layer. We investigated the effects of the first rapid thermal anneal (RTA1) temperature on the silicidation mechanism and CoSi2film properties. It was found that a higher RTA1 temperature results in lower sheet resistance, a smoother CoSi2/Si interface and better film thermal stability. The improved thermal stability may be explained by the smoother CoSi2/Si interface at higher RTA1 temperature.
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Electrical and Electronic Engineering
- Materials Chemistry