Effects of first rapid thermal annealing temperature on Co silicide formation

H. J. Peng, Z. X. Shen, E. H. Lim, C. W. Lai, R. Liu, A. T.S. Wee, A. Sameer, Jiyan Dai, B. C. Zhang, J. Z. Zheng

Research output: Journal article publicationJournal articleAcademic researchpeer-review

5 Citations (Scopus)

Abstract

Cobalt silicide formation has been shown to be improved by a reactive Ti capping layer. We investigated the effects of the first rapid thermal anneal (RTA1) temperature on the silicidation mechanism and CoSi2film properties. It was found that a higher RTA1 temperature results in lower sheet resistance, a smoother CoSi2/Si interface and better film thermal stability. The improved thermal stability may be explained by the smoother CoSi2/Si interface at higher RTA1 temperature.
Original languageEnglish
Pages (from-to)1249-1253
Number of pages5
JournalSolid-State Electronics
Volume47
Issue number8
DOIs
Publication statusPublished - 1 Aug 2003
Externally publishedYes

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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