Effects of first rapid thermal annealing temperature on Co silicide formation

H. J. Peng; Z. X. Shen; E. H. Lim; C. W. Lai; R. Liu; A. T.S. Wee; A. Sameer; Jiyan Dai; B. C. Zhang; J. Z. Zheng

doi:10.1016/S0038-1101(03)00008-X

Effects of first rapid thermal annealing temperature on Co silicide formation

H. J. Peng, Z. X. Shen, E. H. Lim, C. W. Lai, R. Liu, A. T.S. Wee, A. Sameer, Jiyan Dai, B. C. Zhang, J. Z. Zheng

Research output: Journal article publication › Journal article › Academic research › peer-review

5 Citations (Scopus)

Abstract

Cobalt silicide formation has been shown to be improved by a reactive Ti capping layer. We investigated the effects of the first rapid thermal anneal (RTA1) temperature on the silicidation mechanism and CoSi2film properties. It was found that a higher RTA1 temperature results in lower sheet resistance, a smoother CoSi2/Si interface and better film thermal stability. The improved thermal stability may be explained by the smoother CoSi2/Si interface at higher RTA1 temperature.

Original language	English
Pages (from-to)	1249-1253
Number of pages	5
Journal	Solid-State Electronics
Volume	47
Issue number	8
DOIs	https://doi.org/10.1016/S0038-1101(03)00008-X
Publication status	Published - 1 Aug 2003
Externally published	Yes

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

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10.1016/S0038-1101(03)00008-X

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title = "Effects of first rapid thermal annealing temperature on Co silicide formation",

abstract = "Cobalt silicide formation has been shown to be improved by a reactive Ti capping layer. We investigated the effects of the first rapid thermal anneal (RTA1) temperature on the silicidation mechanism and CoSi2film properties. It was found that a higher RTA1 temperature results in lower sheet resistance, a smoother CoSi2/Si interface and better film thermal stability. The improved thermal stability may be explained by the smoother CoSi2/Si interface at higher RTA1 temperature.",

author = "Peng, {H. J.} and Shen, {Z. X.} and Lim, {E. H.} and Lai, {C. W.} and R. Liu and Wee, {A. T.S.} and A. Sameer and Jiyan Dai and Zhang, {B. C.} and Zheng, {J. Z.}",

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doi = "10.1016/S0038-1101(03)00008-X",

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T1 - Effects of first rapid thermal annealing temperature on Co silicide formation

AU - Peng, H. J.

AU - Shen, Z. X.

AU - Lim, E. H.

AU - Lai, C. W.

AU - Liu, R.

AU - Wee, A. T.S.

AU - Sameer, A.

AU - Dai, Jiyan

AU - Zhang, B. C.

AU - Zheng, J. Z.

PY - 2003/8/1

Y1 - 2003/8/1

N2 - Cobalt silicide formation has been shown to be improved by a reactive Ti capping layer. We investigated the effects of the first rapid thermal anneal (RTA1) temperature on the silicidation mechanism and CoSi2film properties. It was found that a higher RTA1 temperature results in lower sheet resistance, a smoother CoSi2/Si interface and better film thermal stability. The improved thermal stability may be explained by the smoother CoSi2/Si interface at higher RTA1 temperature.

AB - Cobalt silicide formation has been shown to be improved by a reactive Ti capping layer. We investigated the effects of the first rapid thermal anneal (RTA1) temperature on the silicidation mechanism and CoSi2film properties. It was found that a higher RTA1 temperature results in lower sheet resistance, a smoother CoSi2/Si interface and better film thermal stability. The improved thermal stability may be explained by the smoother CoSi2/Si interface at higher RTA1 temperature.

UR - http://www.scopus.com/inward/record.url?scp=0038612804&partnerID=8YFLogxK

U2 - 10.1016/S0038-1101(03)00008-X

DO - 10.1016/S0038-1101(03)00008-X

M3 - Journal article

SN - 0038-1101

VL - 47

SP - 1249

EP - 1253

JO - Solid-State Electronics

JF - Solid-State Electronics

IS - 8

ER -

Effects of first rapid thermal annealing temperature on Co silicide formation

Abstract

ASJC Scopus subject areas

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