Effects of dopant concentration on structural and near-infrared luminescence of Nd3+-doped beta-Ga2O3 thin films

Zhenping Wu; Gongxun Bai; Qingrong Hu; Daoyou Guo; Changlong Sun; Liyuan Ji; Ming Lei; Linghong Li; Peigang Li; Jianhua Hao; Weihua Tang

doi:10.1063/1.4919586

Effects of dopant concentration on structural and near-infrared luminescence of Nd³⁺-doped beta-Ga₂O₃ thin films

Zhenping Wu, Gongxun Bai, Qingrong Hu, Daoyou Guo, Changlong Sun, Liyuan Ji, Ming Lei, Linghong Li, Peigang Li, Jianhua Hao, Weihua Tang

Research output: Journal article publication › Journal article › Academic research › peer-review

86 Citations (Scopus)

Abstract

We have investigated structural and near-infrared (NIR) luminescence of Nd³⁺-doped β-Ga₂O₃ thin films (Nd:Ga₂O₃) with different Nd³⁺ doping concentrations. With an increase of Nd³⁺ content, the crystal lattice of the films expands, while the energy band gap shrinks. Moreover, NIR luminescence is investigated as a function of Nd³⁺ doping concentration. The measured results are related to the structural change and energy transfer of cross relaxation process ascribed to ⁴F_3/2 - ⁴I_9/2, ⁴F_3/2 - ⁴I_11/2, and ⁴F_3/2 - ⁴I_13/2 of the phosphor films. This work implies that the enhanced NIR luminescence and blue-shift observation are associated with the lattice distortion and the variation in the crystal field of Nd: Ga₂O₃.

Original language	English
Article number	171910
Journal	Applied Physics Letters
Volume	106
Issue number	17
DOIs	https://doi.org/10.1063/1.4919586
Publication status	Published - 27 Apr 2015

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.4919586

http://hdl.handle.net/10397/15925

Cite this

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title = "Effects of dopant concentration on structural and near-infrared luminescence of Nd3+-doped beta-Ga2O3 thin films",

abstract = "We have investigated structural and near-infrared (NIR) luminescence of Nd3+-doped β-Ga2O3 thin films (Nd:Ga2O3) with different Nd3+ doping concentrations. With an increase of Nd3+ content, the crystal lattice of the films expands, while the energy band gap shrinks. Moreover, NIR luminescence is investigated as a function of Nd3+ doping concentration. The measured results are related to the structural change and energy transfer of cross relaxation process ascribed to 4F3/2 - 4I9/2, 4F3/2 - 4I11/2, and 4F3/2 - 4I13/2 of the phosphor films. This work implies that the enhanced NIR luminescence and blue-shift observation are associated with the lattice distortion and the variation in the crystal field of Nd: Ga2O3.",

author = "Zhenping Wu and Gongxun Bai and Qingrong Hu and Daoyou Guo and Changlong Sun and Liyuan Ji and Ming Lei and Linghong Li and Peigang Li and Jianhua Hao and Weihua Tang",

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T1 - Effects of dopant concentration on structural and near-infrared luminescence of Nd3+-doped beta-Ga2O3 thin films

AU - Wu, Zhenping

AU - Bai, Gongxun

AU - Hu, Qingrong

AU - Guo, Daoyou

AU - Sun, Changlong

AU - Ji, Liyuan

AU - Lei, Ming

AU - Li, Linghong

AU - Li, Peigang

AU - Hao, Jianhua

AU - Tang, Weihua

PY - 2015/4/27

Y1 - 2015/4/27

N2 - We have investigated structural and near-infrared (NIR) luminescence of Nd3+-doped β-Ga2O3 thin films (Nd:Ga2O3) with different Nd3+ doping concentrations. With an increase of Nd3+ content, the crystal lattice of the films expands, while the energy band gap shrinks. Moreover, NIR luminescence is investigated as a function of Nd3+ doping concentration. The measured results are related to the structural change and energy transfer of cross relaxation process ascribed to 4F3/2 - 4I9/2, 4F3/2 - 4I11/2, and 4F3/2 - 4I13/2 of the phosphor films. This work implies that the enhanced NIR luminescence and blue-shift observation are associated with the lattice distortion and the variation in the crystal field of Nd: Ga2O3.

AB - We have investigated structural and near-infrared (NIR) luminescence of Nd3+-doped β-Ga2O3 thin films (Nd:Ga2O3) with different Nd3+ doping concentrations. With an increase of Nd3+ content, the crystal lattice of the films expands, while the energy band gap shrinks. Moreover, NIR luminescence is investigated as a function of Nd3+ doping concentration. The measured results are related to the structural change and energy transfer of cross relaxation process ascribed to 4F3/2 - 4I9/2, 4F3/2 - 4I11/2, and 4F3/2 - 4I13/2 of the phosphor films. This work implies that the enhanced NIR luminescence and blue-shift observation are associated with the lattice distortion and the variation in the crystal field of Nd: Ga2O3.

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DO - 10.1063/1.4919586

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SN - 0003-6951

VL - 106

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JF - Applied Physics Letters

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Effects of dopant concentration on structural and near-infrared luminescence of Nd³⁺-doped beta-Ga₂O₃ thin films

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