Effects of dopant concentration on structural and near-infrared luminescence of Nd3+-doped beta-Ga2O3 thin films

Zhenping Wu, Gongxun Bai, Qingrong Hu, Daoyou Guo, Changlong Sun, Liyuan Ji, Ming Lei, Linghong Li, Peigang Li, Jianhua Hao, Weihua Tang

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Abstract

We have investigated structural and near-infrared (NIR) luminescence of Nd3+-doped β-Ga2O3 thin films (Nd:Ga2O3) with different Nd3+ doping concentrations. With an increase of Nd3+ content, the crystal lattice of the films expands, while the energy band gap shrinks. Moreover, NIR luminescence is investigated as a function of Nd3+ doping concentration. The measured results are related to the structural change and energy transfer of cross relaxation process ascribed to 4F3/2 - 4I9/2, 4F3/2 - 4I11/2, and 4F3/2 - 4I13/2 of the phosphor films. This work implies that the enhanced NIR luminescence and blue-shift observation are associated with the lattice distortion and the variation in the crystal field of Nd: Ga2O3.
Original languageEnglish
Article number171910
JournalApplied Physics Letters
Volume106
Issue number17
DOIs
Publication statusPublished - 27 Apr 2015

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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