Effects of different Ar/O2ratios on the electrical properties of CuPc-based TFTs with ZrO2gate dielectric

Wing Man Tang; M. T. Greiner; M. G. Helander; Z. H. Lu; W. T. Ng

doi:10.1109/EDSSC.2011.6117708

Effects of different Ar/O₂ratios on the electrical properties of CuPc-based TFTs with ZrO₂gate dielectric

Wing Man Tang, M. T. Greiner, M. G. Helander, Z. H. Lu, W. T. Ng

Research output: Chapter in book / Conference proceeding › Conference article published in proceeding or book › Academic research › peer-review

Abstract

CuPc-based TFTs with high-k dielectric ZrO2as gate dielectric prepared by RF magnetron sputtering with various Ar/O2ratios have been fabricated. The effects of oxygen concentration in the sputtering ambient on the electrical performance of the devices are investigated. This work finds that increasing oxygen concentration in the sputtering ambient up to a Ar/O2ratio of 4:1 can improve the OTFT performance including the mobility, sub-threshold slope and on/off ratio. On the other hand, further increasing the Ar/O2ratio to 4:3 is found to degrade the device performance. This demonstrates that the electrical characteristics of the devices depend strongly on the oxygen concentration in the sputtering ambient. The origin of this phenomenon is discussed.

Original language	English
Title of host publication	2011 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2011
DOIs	https://doi.org/10.1109/EDSSC.2011.6117708
Publication status	Published - 1 Dec 2011
Externally published	Yes
Event	2011 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2011 - Tianjin, China Duration: 17 Nov 2011 → 18 Nov 2011

Conference

Conference	2011 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2011
Country/Territory	China
City	Tianjin
Period	17/11/11 → 18/11/11

Keywords

CuPc
High-k dielectric ZrO 2
OTFT

ASJC Scopus subject areas

Hardware and Architecture
Electrical and Electronic Engineering

More information

10.1109/EDSSC.2011.6117708

Cite this

@inproceedings{229949b346a5439885cc7eba45048fb6,

title = "Effects of different Ar/O2ratios on the electrical properties of CuPc-based TFTs with ZrO2gate dielectric",

abstract = "CuPc-based TFTs with high-k dielectric ZrO2as gate dielectric prepared by RF magnetron sputtering with various Ar/O2ratios have been fabricated. The effects of oxygen concentration in the sputtering ambient on the electrical performance of the devices are investigated. This work finds that increasing oxygen concentration in the sputtering ambient up to a Ar/O2ratio of 4:1 can improve the OTFT performance including the mobility, sub-threshold slope and on/off ratio. On the other hand, further increasing the Ar/O2ratio to 4:3 is found to degrade the device performance. This demonstrates that the electrical characteristics of the devices depend strongly on the oxygen concentration in the sputtering ambient. The origin of this phenomenon is discussed.",

keywords = "CuPc, High-k dielectric ZrO 2, OTFT",

author = "Tang, {Wing Man} and Greiner, {M. T.} and Helander, {M. G.} and Lu, {Z. H.} and Ng, {W. T.}",

year = "2011",

month = dec,

day = "1",

doi = "10.1109/EDSSC.2011.6117708",

language = "English",

isbn = "9781457719974",

booktitle = "2011 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2011",

note = "2011 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2011 ; Conference date: 17-11-2011 Through 18-11-2011",

}

Tang, WM, Greiner, MT, Helander, MG, Lu, ZH & Ng, WT 2011, Effects of different Ar/O₂ratios on the electrical properties of CuPc-based TFTs with ZrO₂gate dielectric. in 2011 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2011., 6117708, 2011 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2011, Tianjin, China, 17/11/11. https://doi.org/10.1109/EDSSC.2011.6117708

Effects of different Ar/O₂ratios on the electrical properties of CuPc-based TFTs with ZrO₂gate dielectric. / Tang, Wing Man; Greiner, M. T.; Helander, M. G. et al.
2011 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2011. 2011. 6117708.

Research output: Chapter in book / Conference proceeding › Conference article published in proceeding or book › Academic research › peer-review

TY - GEN

T1 - Effects of different Ar/O2ratios on the electrical properties of CuPc-based TFTs with ZrO2gate dielectric

AU - Tang, Wing Man

AU - Greiner, M. T.

AU - Helander, M. G.

AU - Lu, Z. H.

AU - Ng, W. T.

PY - 2011/12/1

Y1 - 2011/12/1

N2 - CuPc-based TFTs with high-k dielectric ZrO2as gate dielectric prepared by RF magnetron sputtering with various Ar/O2ratios have been fabricated. The effects of oxygen concentration in the sputtering ambient on the electrical performance of the devices are investigated. This work finds that increasing oxygen concentration in the sputtering ambient up to a Ar/O2ratio of 4:1 can improve the OTFT performance including the mobility, sub-threshold slope and on/off ratio. On the other hand, further increasing the Ar/O2ratio to 4:3 is found to degrade the device performance. This demonstrates that the electrical characteristics of the devices depend strongly on the oxygen concentration in the sputtering ambient. The origin of this phenomenon is discussed.

AB - CuPc-based TFTs with high-k dielectric ZrO2as gate dielectric prepared by RF magnetron sputtering with various Ar/O2ratios have been fabricated. The effects of oxygen concentration in the sputtering ambient on the electrical performance of the devices are investigated. This work finds that increasing oxygen concentration in the sputtering ambient up to a Ar/O2ratio of 4:1 can improve the OTFT performance including the mobility, sub-threshold slope and on/off ratio. On the other hand, further increasing the Ar/O2ratio to 4:3 is found to degrade the device performance. This demonstrates that the electrical characteristics of the devices depend strongly on the oxygen concentration in the sputtering ambient. The origin of this phenomenon is discussed.

KW - CuPc

KW - High-k dielectric ZrO 2

KW - OTFT

UR - http://www.scopus.com/inward/record.url?scp=84856118154&partnerID=8YFLogxK

U2 - 10.1109/EDSSC.2011.6117708

DO - 10.1109/EDSSC.2011.6117708

M3 - Conference article published in proceeding or book

SN - 9781457719974

BT - 2011 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2011

T2 - 2011 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2011

Y2 - 17 November 2011 through 18 November 2011

ER -