Effects of different Ar/O2ratios on the electrical properties of CuPc-based TFTs with ZrO2gate dielectric

Wing Man Tang, M. T. Greiner, M. G. Helander, Z. H. Lu, W. T. Ng

Research output: Chapter in book / Conference proceedingConference article published in proceeding or bookAcademic researchpeer-review

Abstract

CuPc-based TFTs with high-k dielectric ZrO2as gate dielectric prepared by RF magnetron sputtering with various Ar/O2ratios have been fabricated. The effects of oxygen concentration in the sputtering ambient on the electrical performance of the devices are investigated. This work finds that increasing oxygen concentration in the sputtering ambient up to a Ar/O2ratio of 4:1 can improve the OTFT performance including the mobility, sub-threshold slope and on/off ratio. On the other hand, further increasing the Ar/O2ratio to 4:3 is found to degrade the device performance. This demonstrates that the electrical characteristics of the devices depend strongly on the oxygen concentration in the sputtering ambient. The origin of this phenomenon is discussed.
Original languageEnglish
Title of host publication2011 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2011
DOIs
Publication statusPublished - 1 Dec 2011
Externally publishedYes
Event2011 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2011 - Tianjin, China
Duration: 17 Nov 201118 Nov 2011

Conference

Conference2011 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2011
CountryChina
CityTianjin
Period17/11/1118/11/11

Keywords

  • CuPc
  • High-k dielectric ZrO 2
  • OTFT

ASJC Scopus subject areas

  • Hardware and Architecture
  • Electrical and Electronic Engineering

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