Effects of coulomb and roughness scatterings on 4H-SiC MOSFET

Ya Liang Zheng; W. M. Tang; Wai Tien Chan; Wing Kit Cheung; Ho Nam Lee; Tony Chau; P. T. Lai

doi:10.1109/EDSSC.2019.8754361

Effects of coulomb and roughness scatterings on 4H-SiC MOSFET

Ya Liang Zheng, W. M. Tang, Wai Tien Chan, Wing Kit Cheung, Ho Nam Lee, Tony Chau, P. T. Lai

Research output: Chapter in book / Conference proceeding › Conference article published in proceeding or book › Academic research › peer-review

Abstract

4H-SiC n-channel MOSFET at 300 K has been studied by using SILVACO TCAD simulation. Based on the good agreements between measured and simulated output characteristics, the components of channel mobility versus gate voltage are clearly illustrated. From the simulation results, the channel mobility degradations due to interface traps under low gate voltage and surface roughness under high gate voltage are analyzed numerically.

Original language	English
Title of host publication	2019 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2019
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)	9781728102863
DOIs	https://doi.org/10.1109/EDSSC.2019.8754361
Publication status	Published - 1 Jun 2019
Event	2019 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2019 - Xi'an, China Duration: 12 Jun 2019 → 14 Jun 2019

Publication series

Name	2019 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2019

Conference

Conference	2019 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2019
Country/Territory	China
City	Xi'an
Period	12/06/19 → 14/06/19

Keywords

Interface trap density
MOSFET
Silicon carbide
Surface roughness

ASJC Scopus subject areas

Signal Processing
Electrical and Electronic Engineering
Instrumentation

More information

10.1109/EDSSC.2019.8754361

Cite this

Zheng, Y. L., Tang, W. M., Chan, W. T., Cheung, W. K., Lee, H. N., Chau, T., & Lai, P. T. (2019). Effects of coulomb and roughness scatterings on 4H-SiC MOSFET. In 2019 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2019 Article 8754361 (2019 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2019). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/EDSSC.2019.8754361

@inproceedings{e006eb7225f04b40af5c688480cb7242,

title = "Effects of coulomb and roughness scatterings on 4H-SiC MOSFET",

abstract = "4H-SiC n-channel MOSFET at 300 K has been studied by using SILVACO TCAD simulation. Based on the good agreements between measured and simulated output characteristics, the components of channel mobility versus gate voltage are clearly illustrated. From the simulation results, the channel mobility degradations due to interface traps under low gate voltage and surface roughness under high gate voltage are analyzed numerically.",

keywords = "Interface trap density, MOSFET, Silicon carbide, Surface roughness",

author = "Zheng, {Ya Liang} and Tang, {W. M.} and Chan, {Wai Tien} and Cheung, {Wing Kit} and Lee, {Ho Nam} and Tony Chau and Lai, {P. T.}",

year = "2019",

month = jun,

day = "1",

doi = "10.1109/EDSSC.2019.8754361",

language = "English",

series = "2019 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2019",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

booktitle = "2019 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2019",

note = "2019 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2019 ; Conference date: 12-06-2019 Through 14-06-2019",

}

Zheng, YL, Tang, WM, Chan, WT, Cheung, WK, Lee, HN, Chau, T & Lai, PT 2019, Effects of coulomb and roughness scatterings on 4H-SiC MOSFET. in 2019 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2019., 8754361, 2019 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2019, Institute of Electrical and Electronics Engineers Inc., 2019 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2019, Xi'an, China, 12/06/19. https://doi.org/10.1109/EDSSC.2019.8754361

Effects of coulomb and roughness scatterings on 4H-SiC MOSFET. / Zheng, Ya Liang; Tang, W. M.; Chan, Wai Tien et al.
2019 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2019. Institute of Electrical and Electronics Engineers Inc., 2019. 8754361 (2019 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2019).

Research output: Chapter in book / Conference proceeding › Conference article published in proceeding or book › Academic research › peer-review

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T1 - Effects of coulomb and roughness scatterings on 4H-SiC MOSFET

AU - Zheng, Ya Liang

AU - Tang, W. M.

AU - Chan, Wai Tien

AU - Cheung, Wing Kit

AU - Lee, Ho Nam

AU - Chau, Tony

AU - Lai, P. T.

PY - 2019/6/1

Y1 - 2019/6/1

N2 - 4H-SiC n-channel MOSFET at 300 K has been studied by using SILVACO TCAD simulation. Based on the good agreements between measured and simulated output characteristics, the components of channel mobility versus gate voltage are clearly illustrated. From the simulation results, the channel mobility degradations due to interface traps under low gate voltage and surface roughness under high gate voltage are analyzed numerically.

AB - 4H-SiC n-channel MOSFET at 300 K has been studied by using SILVACO TCAD simulation. Based on the good agreements between measured and simulated output characteristics, the components of channel mobility versus gate voltage are clearly illustrated. From the simulation results, the channel mobility degradations due to interface traps under low gate voltage and surface roughness under high gate voltage are analyzed numerically.

KW - Interface trap density

KW - MOSFET

KW - Silicon carbide

KW - Surface roughness

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DO - 10.1109/EDSSC.2019.8754361

M3 - Conference article published in proceeding or book

T3 - 2019 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2019

BT - 2019 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2019

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 2019 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2019

Y2 - 12 June 2019 through 14 June 2019

ER -

Zheng YL, Tang WM, Chan WT, Cheung WK, Lee HN, Chau T et al. Effects of coulomb and roughness scatterings on 4H-SiC MOSFET. In 2019 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2019. Institute of Electrical and Electronics Engineers Inc. 2019. 8754361. (2019 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2019). doi: 10.1109/EDSSC.2019.8754361

Effects of coulomb and roughness scatterings on 4H-SiC MOSFET

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