Effects of coulomb and roughness scatterings on 4H-SiC MOSFET

Ya Liang Zheng, W. M. Tang, Wai Tien Chan, Wing Kit Cheung, Ho Nam Lee, Tony Chau, P. T. Lai

Research output: Chapter in book / Conference proceedingConference article published in proceeding or bookAcademic researchpeer-review

Abstract

4H-SiC n-channel MOSFET at 300 K has been studied by using SILVACO TCAD simulation. Based on the good agreements between measured and simulated output characteristics, the components of channel mobility versus gate voltage are clearly illustrated. From the simulation results, the channel mobility degradations due to interface traps under low gate voltage and surface roughness under high gate voltage are analyzed numerically.

Original languageEnglish
Title of host publication2019 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2019
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781728102863
DOIs
Publication statusPublished - 1 Jun 2019
Event2019 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2019 - Xi'an, China
Duration: 12 Jun 201914 Jun 2019

Publication series

Name2019 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2019

Conference

Conference2019 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2019
CountryChina
CityXi'an
Period12/06/1914/06/19

Keywords

  • Interface trap density
  • MOSFET
  • Silicon carbide
  • Surface roughness

ASJC Scopus subject areas

  • Signal Processing
  • Electrical and Electronic Engineering
  • Instrumentation

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