Effects of annealing temperature on sensing properties of Pt/HfO 2/SiC Schottky-diode hydrogen sensor

Wing Man Tang, C. H. Leung, P. T. Lai

Research output: Chapter in book / Conference proceedingConference article published in proceeding or bookAcademic researchpeer-review

Abstract

Hafnium oxide (HfO 2) is successfully used as gate insulator for fabricating Metal-Insulator-SiC (MISiC) Schottky-diode hydrogen sensor. Sensors undergone N 2 annealing at different temperatures are fabricated for investigation. The hydrogen-sensing properties of these samples are compared with each other by taking the measurements at high temperature under various hydrogen concentrations using a computer-controlled measurement system. Experimental results show that sensitivity increases with the annealing temperature. Higher annealing temperature can enhance the densification of the HfO 2 film; improve the oxide stoichiometry; and facilitate the growth of a SiO 2 interfacial layer to give better interface quality, thus causing a remarkable reduction of the current of the sensor under air ambient. The effects of hydrogen adsorption on the barrier height and hydrogen-reaction kinetics are also investigated.
Original languageEnglish
Title of host publication2008 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC
DOIs
Publication statusPublished - 1 Dec 2008
Externally publishedYes
Event2008 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC - Hong Kong, Hong Kong
Duration: 8 Dec 200810 Dec 2008

Conference

Conference2008 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC
Country/TerritoryHong Kong
CityHong Kong
Period8/12/0810/12/08

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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