Abstract
Hafnium oxide (HfO 2) is successfully used as gate insulator for fabricating Metal-Insulator-SiC (MISiC) Schottky-diode hydrogen sensor. Sensors undergone N 2 annealing at different temperatures are fabricated for investigation. The hydrogen-sensing properties of these samples are compared with each other by taking the measurements at high temperature under various hydrogen concentrations using a computer-controlled measurement system. Experimental results show that sensitivity increases with the annealing temperature. Higher annealing temperature can enhance the densification of the HfO 2 film; improve the oxide stoichiometry; and facilitate the growth of a SiO 2 interfacial layer to give better interface quality, thus causing a remarkable reduction of the current of the sensor under air ambient. The effects of hydrogen adsorption on the barrier height and hydrogen-reaction kinetics are also investigated.
Original language | English |
---|---|
Title of host publication | 2008 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC |
DOIs | |
Publication status | Published - 1 Dec 2008 |
Externally published | Yes |
Event | 2008 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC - Hong Kong, Hong Kong Duration: 8 Dec 2008 → 10 Dec 2008 |
Conference
Conference | 2008 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC |
---|---|
Country/Territory | Hong Kong |
City | Hong Kong |
Period | 8/12/08 → 10/12/08 |
ASJC Scopus subject areas
- Electrical and Electronic Engineering