Effects of annealing temperature on sensing properties of Pt/HfO 2/SiC Schottky-diode hydrogen sensor

Wing Man Tang; C. H. Leung; P. T. Lai

doi:10.1109/EDSSC.2008.4760752

Effects of annealing temperature on sensing properties of Pt/HfO ₂/SiC Schottky-diode hydrogen sensor

Wing Man Tang, C. H. Leung, P. T. Lai

Research output: Chapter in book / Conference proceeding › Conference article published in proceeding or book › Academic research › peer-review

Abstract

Hafnium oxide (HfO 2) is successfully used as gate insulator for fabricating Metal-Insulator-SiC (MISiC) Schottky-diode hydrogen sensor. Sensors undergone N 2 annealing at different temperatures are fabricated for investigation. The hydrogen-sensing properties of these samples are compared with each other by taking the measurements at high temperature under various hydrogen concentrations using a computer-controlled measurement system. Experimental results show that sensitivity increases with the annealing temperature. Higher annealing temperature can enhance the densification of the HfO 2 film; improve the oxide stoichiometry; and facilitate the growth of a SiO 2 interfacial layer to give better interface quality, thus causing a remarkable reduction of the current of the sensor under air ambient. The effects of hydrogen adsorption on the barrier height and hydrogen-reaction kinetics are also investigated.

Original language	English
Title of host publication	2008 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC
DOIs	https://doi.org/10.1109/EDSSC.2008.4760752
Publication status	Published - 1 Dec 2008
Externally published	Yes
Event	2008 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC - Hong Kong, Hong Kong Duration: 8 Dec 2008 → 10 Dec 2008

Conference

Conference	2008 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC
Country/Territory	Hong Kong
City	Hong Kong
Period	8/12/08 → 10/12/08

ASJC Scopus subject areas

Electrical and Electronic Engineering

More information

10.1109/EDSSC.2008.4760752

Cite this

@inproceedings{c2d57da30ebc40839614cd950e6a9458,

title = "Effects of annealing temperature on sensing properties of Pt/HfO 2/SiC Schottky-diode hydrogen sensor",

abstract = "Hafnium oxide (HfO 2) is successfully used as gate insulator for fabricating Metal-Insulator-SiC (MISiC) Schottky-diode hydrogen sensor. Sensors undergone N 2 annealing at different temperatures are fabricated for investigation. The hydrogen-sensing properties of these samples are compared with each other by taking the measurements at high temperature under various hydrogen concentrations using a computer-controlled measurement system. Experimental results show that sensitivity increases with the annealing temperature. Higher annealing temperature can enhance the densification of the HfO 2 film; improve the oxide stoichiometry; and facilitate the growth of a SiO 2 interfacial layer to give better interface quality, thus causing a remarkable reduction of the current of the sensor under air ambient. The effects of hydrogen adsorption on the barrier height and hydrogen-reaction kinetics are also investigated.",

author = "Tang, {Wing Man} and Leung, {C. H.} and Lai, {P. T.}",

year = "2008",

month = dec,

day = "1",

doi = "10.1109/EDSSC.2008.4760752",

language = "English",

isbn = "9781424425402",

booktitle = "2008 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC",

note = "2008 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC ; Conference date: 08-12-2008 Through 10-12-2008",

}

Tang, WM, Leung, CH & Lai, PT 2008, Effects of annealing temperature on sensing properties of Pt/HfO ₂/SiC Schottky-diode hydrogen sensor. in 2008 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC., 4760752, 2008 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC, Hong Kong, Hong Kong, 8/12/08. https://doi.org/10.1109/EDSSC.2008.4760752

Effects of annealing temperature on sensing properties of Pt/HfO ₂/SiC Schottky-diode hydrogen sensor. / Tang, Wing Man; Leung, C. H.; Lai, P. T.

2008 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC. 2008. 4760752.

Research output: Chapter in book / Conference proceeding › Conference article published in proceeding or book › Academic research › peer-review

TY - GEN

T1 - Effects of annealing temperature on sensing properties of Pt/HfO 2/SiC Schottky-diode hydrogen sensor

AU - Tang, Wing Man

AU - Leung, C. H.

AU - Lai, P. T.

PY - 2008/12/1

Y1 - 2008/12/1

N2 - Hafnium oxide (HfO 2) is successfully used as gate insulator for fabricating Metal-Insulator-SiC (MISiC) Schottky-diode hydrogen sensor. Sensors undergone N 2 annealing at different temperatures are fabricated for investigation. The hydrogen-sensing properties of these samples are compared with each other by taking the measurements at high temperature under various hydrogen concentrations using a computer-controlled measurement system. Experimental results show that sensitivity increases with the annealing temperature. Higher annealing temperature can enhance the densification of the HfO 2 film; improve the oxide stoichiometry; and facilitate the growth of a SiO 2 interfacial layer to give better interface quality, thus causing a remarkable reduction of the current of the sensor under air ambient. The effects of hydrogen adsorption on the barrier height and hydrogen-reaction kinetics are also investigated.

AB - Hafnium oxide (HfO 2) is successfully used as gate insulator for fabricating Metal-Insulator-SiC (MISiC) Schottky-diode hydrogen sensor. Sensors undergone N 2 annealing at different temperatures are fabricated for investigation. The hydrogen-sensing properties of these samples are compared with each other by taking the measurements at high temperature under various hydrogen concentrations using a computer-controlled measurement system. Experimental results show that sensitivity increases with the annealing temperature. Higher annealing temperature can enhance the densification of the HfO 2 film; improve the oxide stoichiometry; and facilitate the growth of a SiO 2 interfacial layer to give better interface quality, thus causing a remarkable reduction of the current of the sensor under air ambient. The effects of hydrogen adsorption on the barrier height and hydrogen-reaction kinetics are also investigated.

UR - http://www.scopus.com/inward/record.url?scp=63249096894&partnerID=8YFLogxK

U2 - 10.1109/EDSSC.2008.4760752

DO - 10.1109/EDSSC.2008.4760752

M3 - Conference article published in proceeding or book

SN - 9781424425402

BT - 2008 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC

T2 - 2008 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC

Y2 - 8 December 2008 through 10 December 2008

ER -