Effective passivation of HfO2/Ge interface by using nitrided germanate as passivation interlayer

Zhi Xiang Cheng, Jing Ping Xu, Lu Liu, Yong Huang, Pui To Lai, Wing Man Tang

Research output: Journal article publicationJournal articleAcademic researchpeer-review

Abstract

KGaA, Weinheim Ge metal-oxide-semiconductor (MOS) capacitor with YON/LaON, as interface passivation layer (IPL), and HfO2, as gate dielectric, is proposed to take advantage of both the good passivation effect by LaON and the suppressed intermixing between HfO2and Ge by YON. As a result, superior interfacial and electrical properties are obtained, as compared to samples with only YON or LaON as IPL: high k value (19.5), low interface-state density (6.64 × 1011cm−2eV−1) and oxide-charge density (−4.18 × 1012cm−2), small gate leakage current (1.15 × 10−4A cm−2at Vg= Vfb+ 1 V), and good high-field reliability. Schematic diagram (a) and C–V curves (b) of the gate stack with YON/LaON dual IPL.
Original languageEnglish
Article numbere201600974
JournalPhysica Status Solidi (A) Applications and Materials Science
Volume214
Issue number6
DOIs
Publication statusPublished - 1 Jun 2017

Keywords

  • capacitors
  • gate dielectric
  • Ge
  • HfO 2
  • interfaces
  • metal-oxide semiconductors
  • nitrided germanate
  • passivation

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Materials Chemistry
  • Electrical and Electronic Engineering

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