Abstract
The effect of uniaxial tensile strain on the shear mode (C mode) and layer breathing mode (LB mode) of few layers MoS2 were studied. The C mode is doubly degenerated into two sub-peaks as applied strain increases. No measurable Raman shift for the LB mode is observed, while its Raman intensity decreases gradually as the strain increases. In addition, the C and LB modes exhibit distinguished thickness dependence. The C mode shows a clear blueshift as the strain increases, while the LB mode is softened in the process. Moreover, the evolution of C mode with thickness follows an enhanced linear-chain model plus a linear component very well. It implies that the C mode is a better thickness navigator as compared to the L mode.
Original language | English |
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Pages (from-to) | Q3033-Q3037 |
Journal | ECS Journal of Solid State Science and Technology |
Volume | 5 |
Issue number | 11 |
DOIs | |
Publication status | Published - 1 Jan 2016 |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials