Abstract
Shape memory alloys (SMAs) exhibit two very important properties: shape memory phenomenon and superelastic deformation due to intrinsic thermoelastic martensitic transformation. To fully exploit the potential of SMAs in developing functional structures or smart structures in mechanical and biomechanical engineering, it is important to understand and quantify the failure mechanisms of SMAs. This, paper presents a theoretical study of the effect of phase-transformation-induced volume contraction on the fracture properties of superelastic SMAs. A simple model is employed to account for the forward and reverse phase transformation with pure volume change, which is then applied to numerically study the transformation field near the tip of a tensile crack. The results reveal that during steady-state crack propagation, the transformation zone extends ahead of the crack tip due to forward transformation while partial reverse transformation occurs in the wake. Furthermore, as a result of the volume contraction associated with the austenite-to-martensite transformation, the induced stress-intensity factor is positive. This is in stark contrast with the negative stress-intensity factor achieved in zirconia ceramics, which undergoes volume expansion during phase transformation. The reverse transformation has been found to have a negligible effect on the induced stress-intensity factor. An important implication of the present results is that the phase transformation with volume contraction in SMAs tends to reduce their fracture resistance and increase the brittleness.
Original language | English |
---|---|
Pages (from-to) | 947-955 |
Number of pages | 9 |
Journal | Smart Materials and Structures |
Volume | 11 |
Issue number | 6 |
DOIs | |
Publication status | Published - Dec 2002 |
Externally published | Yes |
ASJC Scopus subject areas
- Signal Processing
- Civil and Structural Engineering
- Atomic and Molecular Physics, and Optics
- General Materials Science
- Condensed Matter Physics
- Mechanics of Materials
- Electrical and Electronic Engineering