Effect of the magnetic order on the room-temperature band-gap of Mn-doped ZnO thin films

X. L. Wang; C. Y. Luan; Q. Shao; A. Pruna; Chi Wah Leung; R. Lortz; J. A. Zapien; A. Ruotolo

doi:10.1063/1.4795797

Effect of the magnetic order on the room-temperature band-gap of Mn-doped ZnO thin films

X. L. Wang
, C. Y. Luan
, Q. Shao
, A. Pruna
, Chi Wah Leung
, R. Lortz
, J. A. Zapien
, A. Ruotolo

Research output: Journal article publication › Journal article › Academic research › peer-review

112 Citations (Scopus)

Abstract

Exchange interaction between localized magnetic moments mediated by free charge carriers is responsible for a non-monotonic dependence of the low-temperature energy band-gap in dilute magnetic semiconductors. We found that in weakly doped Mn-ZnO films, increasing the exchange interaction by increasing the concentration of free charge carriers results in a red-shift of the near-band-edge emission peak at room temperature. An increase of Mn concentration widens the band gap, and a blue-shift prevails. Exchange interaction can be used to tune the room-temperature optical properties of the wide-band gap semiconductor ZnO.

Original language	English
Article number	102112
Journal	Applied Physics Letters
Volume	102
Issue number	10
DOIs	https://doi.org/10.1063/1.4795797
Publication status	Published - 11 Mar 2013

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.4795797

http://hdl.handle.net/10397/5865

Cite this

@article{fea136955fd94f598932e7cf39a5d6c7,

title = "Effect of the magnetic order on the room-temperature band-gap of Mn-doped ZnO thin films",

abstract = "Exchange interaction between localized magnetic moments mediated by free charge carriers is responsible for a non-monotonic dependence of the low-temperature energy band-gap in dilute magnetic semiconductors. We found that in weakly doped Mn-ZnO films, increasing the exchange interaction by increasing the concentration of free charge carriers results in a red-shift of the near-band-edge emission peak at room temperature. An increase of Mn concentration widens the band gap, and a blue-shift prevails. Exchange interaction can be used to tune the room-temperature optical properties of the wide-band gap semiconductor ZnO.",

author = "Wang, \{X. L.\} and Luan, \{C. Y.\} and Q. Shao and A. Pruna and Leung, \{Chi Wah\} and R. Lortz and Zapien, \{J. A.\} and A. Ruotolo",

year = "2013",

month = mar,

day = "11",

doi = "10.1063/1.4795797",

language = "English",

volume = "102",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "10",

}

TY - JOUR

T1 - Effect of the magnetic order on the room-temperature band-gap of Mn-doped ZnO thin films

AU - Wang, X. L.

AU - Luan, C. Y.

AU - Shao, Q.

AU - Pruna, A.

AU - Leung, Chi Wah

AU - Lortz, R.

AU - Zapien, J. A.

AU - Ruotolo, A.

PY - 2013/3/11

Y1 - 2013/3/11

N2 - Exchange interaction between localized magnetic moments mediated by free charge carriers is responsible for a non-monotonic dependence of the low-temperature energy band-gap in dilute magnetic semiconductors. We found that in weakly doped Mn-ZnO films, increasing the exchange interaction by increasing the concentration of free charge carriers results in a red-shift of the near-band-edge emission peak at room temperature. An increase of Mn concentration widens the band gap, and a blue-shift prevails. Exchange interaction can be used to tune the room-temperature optical properties of the wide-band gap semiconductor ZnO.

AB - Exchange interaction between localized magnetic moments mediated by free charge carriers is responsible for a non-monotonic dependence of the low-temperature energy band-gap in dilute magnetic semiconductors. We found that in weakly doped Mn-ZnO films, increasing the exchange interaction by increasing the concentration of free charge carriers results in a red-shift of the near-band-edge emission peak at room temperature. An increase of Mn concentration widens the band gap, and a blue-shift prevails. Exchange interaction can be used to tune the room-temperature optical properties of the wide-band gap semiconductor ZnO.

UR - https://www.scopus.com/pages/publications/84875132823

U2 - 10.1063/1.4795797

DO - 10.1063/1.4795797

M3 - Journal article

SN - 0003-6951

VL - 102

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 10

M1 - 102112

ER -

Effect of the magnetic order on the room-temperature band-gap of Mn-doped ZnO thin films

Abstract

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