Effect of the magnetic order on the room-temperature band-gap of Mn-doped ZnO thin films

X. L. Wang; C. Y. Luan; Q. Shao; A. Pruna; Chi Wah Leung; R. Lortz; J. A. Zapien; A. Ruotolo

doi:10.1063/1.4795797

Effect of the magnetic order on the room-temperature band-gap of Mn-doped ZnO thin films

X. L. Wang, C. Y. Luan, Q. Shao, A. Pruna, Chi Wah Leung, R. Lortz, J. A. Zapien, A. Ruotolo

Research output: Journal article publication › Journal article › Academic research › peer-review

108 Citations (Scopus)

Abstract

Exchange interaction between localized magnetic moments mediated by free charge carriers is responsible for a non-monotonic dependence of the low-temperature energy band-gap in dilute magnetic semiconductors. We found that in weakly doped Mn-ZnO films, increasing the exchange interaction by increasing the concentration of free charge carriers results in a red-shift of the near-band-edge emission peak at room temperature. An increase of Mn concentration widens the band gap, and a blue-shift prevails. Exchange interaction can be used to tune the room-temperature optical properties of the wide-band gap semiconductor ZnO.

Original language	English
Article number	102112
Journal	Applied Physics Letters
Volume	102
Issue number	10
DOIs	https://doi.org/10.1063/1.4795797
Publication status	Published - 11 Mar 2013

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.4795797

http://hdl.handle.net/10397/5865

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AU - Wang, X. L.

AU - Luan, C. Y.

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AU - Pruna, A.

AU - Leung, Chi Wah

AU - Lortz, R.

AU - Zapien, J. A.

AU - Ruotolo, A.

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N2 - Exchange interaction between localized magnetic moments mediated by free charge carriers is responsible for a non-monotonic dependence of the low-temperature energy band-gap in dilute magnetic semiconductors. We found that in weakly doped Mn-ZnO films, increasing the exchange interaction by increasing the concentration of free charge carriers results in a red-shift of the near-band-edge emission peak at room temperature. An increase of Mn concentration widens the band gap, and a blue-shift prevails. Exchange interaction can be used to tune the room-temperature optical properties of the wide-band gap semiconductor ZnO.

AB - Exchange interaction between localized magnetic moments mediated by free charge carriers is responsible for a non-monotonic dependence of the low-temperature energy band-gap in dilute magnetic semiconductors. We found that in weakly doped Mn-ZnO films, increasing the exchange interaction by increasing the concentration of free charge carriers results in a red-shift of the near-band-edge emission peak at room temperature. An increase of Mn concentration widens the band gap, and a blue-shift prevails. Exchange interaction can be used to tune the room-temperature optical properties of the wide-band gap semiconductor ZnO.

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Effect of the magnetic order on the room-temperature band-gap of Mn-doped ZnO thin films

Abstract

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