Effect of the magnetic order on the room-temperature band-gap of Mn-doped ZnO thin films

X. L. Wang, C. Y. Luan, Q. Shao, A. Pruna, Chi Wah Leung, R. Lortz, J. A. Zapien, A. Ruotolo

Research output: Journal article publicationJournal articleAcademic researchpeer-review

86 Citations (Scopus)

Abstract

Exchange interaction between localized magnetic moments mediated by free charge carriers is responsible for a non-monotonic dependence of the low-temperature energy band-gap in dilute magnetic semiconductors. We found that in weakly doped Mn-ZnO films, increasing the exchange interaction by increasing the concentration of free charge carriers results in a red-shift of the near-band-edge emission peak at room temperature. An increase of Mn concentration widens the band gap, and a blue-shift prevails. Exchange interaction can be used to tune the room-temperature optical properties of the wide-band gap semiconductor ZnO.
Original languageEnglish
Article number102112
JournalApplied Physics Letters
Volume102
Issue number10
DOIs
Publication statusPublished - 11 Mar 2013

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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