Effect of post-annealing on sputtered MoS2 films

W. C. Wong, S. M. Ng, H. F. Wong, W. F. Cheng, C. L. Mak, C. W. Leung

Research output: Journal article publicationJournal articleAcademic researchpeer-review

10 Citations (Scopus)


Typical routes for fabricating MoS2-based electronic devices rely on the transfer of as-prepared flakes to target substrates, which is incompatible with conventional device fabrication methods. In this work we investigated the preparation of MoS2 films by magnetron sputtering. By subjecting room-temperature sputtered MoS2 films to post-annealing at mild conditions (450 °C in a nitrogen flow), crystalline MoS2 films were formed. To demonstrate the compatibility of the technique with typical device fabrication processes, MoS2 was prepared on epitaxial magnetic oxide films of La0.7Sr0.3MnO3, and the magnetic behavior of the films were unaffected by the post-annealing process. This work demonstrates the possibility of fabricating electronic and spintronic devices based on continuous MoS2 films prepared by sputtering deposition.

Original languageEnglish
Pages (from-to)62-65
Number of pages4
JournalSolid-State Electronics
Publication statusPublished - 1 Dec 2017


  • MoS
  • Post-annealing
  • Transfer-free

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry


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