Effect of post annealing on La0.7Sr0.3MnO3thin films

W. F. Cheng; Chi Wah Leung

doi:10.12693/APhysPolA.111.117

Effect of post annealing on La_0.7Sr_0.3MnO₃thin films

W. F. Cheng, Chi Wah Leung

Research output: Journal article publication › Journal article › Academic research › peer-review

3 Citations (Scopus)

Abstract

The stability of La0.7Sr0.3MnO3thin films fabricated by pulsed laser deposition, under different annealing procedures, was investigated. La0.7Sr0.3MnO3films were deposited on (100) LaAlO3substrates at 650°C with the films thickness from 20 to 50 nm. The oxygen pressures used to fabricate the films were 150 mTorr and 100 mTorr. Then in situ annealing steps were performed at 100 and 150 mTorr, respectively. Curie temperatures (Tc) of the films were estimated from the peaks of the temperature dependent resistance data. For the films deposited at 100 mTorr and annealed at 150 mTorr, Tcslightly dropped for short annealing time and recovered to 360 K for 30 min annealing. For the films deposited at 100 mTorr and annealed at 150 mTorr, it maintained semiconducting behavior without transition after annealing up to 30 minutes. For ex situ post annealing, it was found that the Tcof the films strongly depended on the annealing procedures.

Original language	English
Pages (from-to)	117-122
Number of pages	6
Journal	Acta Physica Polonica A
Volume	111
Issue number	1
DOIs	https://doi.org/10.12693/APhysPolA.111.117
Publication status	Published - 1 Jan 2007

ASJC Scopus subject areas

General Physics and Astronomy

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10.12693/APhysPolA.111.117

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abstract = "The stability of La0.7Sr0.3MnO3thin films fabricated by pulsed laser deposition, under different annealing procedures, was investigated. La0.7Sr0.3MnO3films were deposited on (100) LaAlO3substrates at 650°C with the films thickness from 20 to 50 nm. The oxygen pressures used to fabricate the films were 150 mTorr and 100 mTorr. Then in situ annealing steps were performed at 100 and 150 mTorr, respectively. Curie temperatures (Tc) of the films were estimated from the peaks of the temperature dependent resistance data. For the films deposited at 100 mTorr and annealed at 150 mTorr, Tcslightly dropped for short annealing time and recovered to 360 K for 30 min annealing. For the films deposited at 100 mTorr and annealed at 150 mTorr, it maintained semiconducting behavior without transition after annealing up to 30 minutes. For ex situ post annealing, it was found that the Tcof the films strongly depended on the annealing procedures.",

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N2 - The stability of La0.7Sr0.3MnO3thin films fabricated by pulsed laser deposition, under different annealing procedures, was investigated. La0.7Sr0.3MnO3films were deposited on (100) LaAlO3substrates at 650°C with the films thickness from 20 to 50 nm. The oxygen pressures used to fabricate the films were 150 mTorr and 100 mTorr. Then in situ annealing steps were performed at 100 and 150 mTorr, respectively. Curie temperatures (Tc) of the films were estimated from the peaks of the temperature dependent resistance data. For the films deposited at 100 mTorr and annealed at 150 mTorr, Tcslightly dropped for short annealing time and recovered to 360 K for 30 min annealing. For the films deposited at 100 mTorr and annealed at 150 mTorr, it maintained semiconducting behavior without transition after annealing up to 30 minutes. For ex situ post annealing, it was found that the Tcof the films strongly depended on the annealing procedures.

AB - The stability of La0.7Sr0.3MnO3thin films fabricated by pulsed laser deposition, under different annealing procedures, was investigated. La0.7Sr0.3MnO3films were deposited on (100) LaAlO3substrates at 650°C with the films thickness from 20 to 50 nm. The oxygen pressures used to fabricate the films were 150 mTorr and 100 mTorr. Then in situ annealing steps were performed at 100 and 150 mTorr, respectively. Curie temperatures (Tc) of the films were estimated from the peaks of the temperature dependent resistance data. For the films deposited at 100 mTorr and annealed at 150 mTorr, Tcslightly dropped for short annealing time and recovered to 360 K for 30 min annealing. For the films deposited at 100 mTorr and annealed at 150 mTorr, it maintained semiconducting behavior without transition after annealing up to 30 minutes. For ex situ post annealing, it was found that the Tcof the films strongly depended on the annealing procedures.

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Effect of post annealing on La_0.7Sr_0.3MnO₃thin films

Abstract

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