Effect of post-annealing on laser-ablation deposited WS2 thin films

H. Wang, S. M. Ng, H. F. Wong, W. C. Wong, K. K. Lam, Y. K. Liu, L. F. Fei, Y. B. Zhou, C. L. Mak, Y. Wang, C. W. Leung

Research output: Journal article publicationJournal articleAcademic researchpeer-review

7 Citations (Scopus)


We deposited WS2 thin films by pulsed laser deposition on sapphire substrates at room temperature, and studied the effect of post-annealing temperature on the quality of the WS2 films. By comparing the full-width-at-half-maximum of the characteristic WS2 Raman peaks, we explored the relationship between the post-annealing temperature and the crystallinity of WS2 films. Optoelectronic measurements conducted on post-annealed WS2 film-based photodetectors showed improvement with rising annealing temperatures. Our study revealed the possibility of preparing large-area dichalcogenides for optoelectronic applications.

Original languageEnglish
Pages (from-to)239-242
Number of pages4
Publication statusPublished - Jun 2018


  • Post-annealing
  • Pulsed laser deposition
  • Raman spectroscopy
  • WS

ASJC Scopus subject areas

  • Instrumentation
  • Condensed Matter Physics
  • Surfaces, Coatings and Films


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