Effect of oxygen vacancy modification on electrical properties of La(Cr0.2Mn0.2Fe0.2Co0.2Ni0.2)O3 high-entropy perovskite oxide films

Xin Yuan; Sheung Mei Ng; Peigen Li; Jingming Liang; Hon Fai Wong; ChuangShi Feng; Shuai Nan; HongQuan Song; Zhou Guan; FuXiang Zhang; Chi Wah Leung

doi:10.1063/5.0267185

Effect of oxygen vacancy modification on electrical properties of La(Cr_0.2Mn_0.2Fe_0.2Co_0.2Ni_0.2)O₃ high-entropy perovskite oxide films

Xin Yuan, Sheung Mei Ng, Peigen Li, Jingming Liang, Hon Fai Wong, ChuangShi Feng, Shuai Nan, HongQuan Song, Zhou Guan, FuXiang Zhang, Chi Wah Leung

Research output: Journal article publication › Journal article › Academic research › peer-review

Abstract

The epitaxial La(Cr0.2Mn0.2Fe0.2Co0.2Ni0.2)O3 (L5BO3) thin films with varying oxygen vacancies were prepared on (001) SrTiO3 substrates in this work. These thin films exhibit a high degree of crystallinity and prominent semiconductor characteristics. The valence state of the B-site elements is influenced by the introduction of oxygen vacancies, which in turn affects the spin state. Electrical properties were investigated across a broad temperature range (150–400 K), demonstrating significant resistivity variations of up to 3 orders of magnitude as a function of increasing oxygen vacancies. The corresponding mechanisms of small polaron hopping and variable range hopping are discussed. This work explores the effect of oxygen vacancies on the structure and performance of L5BO3 high-entropy oxide films prepared under various oxygen pressures, offering foundational insights into compositional manipulation of high-entropy oxides.

Original language	English
Article number	065321
Journal	AIP Advances
Volume	15
Issue number	6
DOIs	https://doi.org/10.1063/5.0267185
Publication status	Published - 11 Jun 2025

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10.1063/5.0267185Licence: CC BY-NC-ND

http://hdl.handle.net/10397/113616

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title = "Effect of oxygen vacancy modification on electrical properties of La(Cr0.2Mn0.2Fe0.2Co0.2Ni0.2)O3 high-entropy perovskite oxide films",

abstract = "The epitaxial La(Cr0.2Mn0.2Fe0.2Co0.2Ni0.2)O3 (L5BO3) thin films with varying oxygen vacancies were prepared on (001) SrTiO3 substrates in this work. These thin films exhibit a high degree of crystallinity and prominent semiconductor characteristics. The valence state of the B-site elements is influenced by the introduction of oxygen vacancies, which in turn affects the spin state. Electrical properties were investigated across a broad temperature range (150–400 K), demonstrating significant resistivity variations of up to 3 orders of magnitude as a function of increasing oxygen vacancies. The corresponding mechanisms of small polaron hopping and variable range hopping are discussed. This work explores the effect of oxygen vacancies on the structure and performance of L5BO3 high-entropy oxide films prepared under various oxygen pressures, offering foundational insights into compositional manipulation of high-entropy oxides.",

author = "Xin Yuan and Ng, \{Sheung Mei\} and Peigen Li and Jingming Liang and Wong, \{Hon Fai\} and ChuangShi Feng and Shuai Nan and HongQuan Song and Zhou Guan and FuXiang Zhang and Leung, \{Chi Wah\}",

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language = "English",

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journal = "AIP Advances",

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T1 - Effect of oxygen vacancy modification on electrical properties of La(Cr0.2Mn0.2Fe0.2Co0.2Ni0.2)O3 high-entropy perovskite oxide films

AU - Yuan, Xin

AU - Ng, Sheung Mei

AU - Li, Peigen

AU - Liang, Jingming

AU - Wong, Hon Fai

AU - Feng, ChuangShi

AU - Nan, Shuai

AU - Song, HongQuan

AU - Guan, Zhou

AU - Zhang, FuXiang

AU - Leung, Chi Wah

PY - 2025/6/11

Y1 - 2025/6/11

N2 - The epitaxial La(Cr0.2Mn0.2Fe0.2Co0.2Ni0.2)O3 (L5BO3) thin films with varying oxygen vacancies were prepared on (001) SrTiO3 substrates in this work. These thin films exhibit a high degree of crystallinity and prominent semiconductor characteristics. The valence state of the B-site elements is influenced by the introduction of oxygen vacancies, which in turn affects the spin state. Electrical properties were investigated across a broad temperature range (150–400 K), demonstrating significant resistivity variations of up to 3 orders of magnitude as a function of increasing oxygen vacancies. The corresponding mechanisms of small polaron hopping and variable range hopping are discussed. This work explores the effect of oxygen vacancies on the structure and performance of L5BO3 high-entropy oxide films prepared under various oxygen pressures, offering foundational insights into compositional manipulation of high-entropy oxides.

AB - The epitaxial La(Cr0.2Mn0.2Fe0.2Co0.2Ni0.2)O3 (L5BO3) thin films with varying oxygen vacancies were prepared on (001) SrTiO3 substrates in this work. These thin films exhibit a high degree of crystallinity and prominent semiconductor characteristics. The valence state of the B-site elements is influenced by the introduction of oxygen vacancies, which in turn affects the spin state. Electrical properties were investigated across a broad temperature range (150–400 K), demonstrating significant resistivity variations of up to 3 orders of magnitude as a function of increasing oxygen vacancies. The corresponding mechanisms of small polaron hopping and variable range hopping are discussed. This work explores the effect of oxygen vacancies on the structure and performance of L5BO3 high-entropy oxide films prepared under various oxygen pressures, offering foundational insights into compositional manipulation of high-entropy oxides.

U2 - 10.1063/5.0267185

DO - 10.1063/5.0267185

M3 - Journal article

SN - 2158-3226

VL - 15

JO - AIP Advances

JF - AIP Advances

IS - 6

M1 - 065321

ER -

Effect of oxygen vacancy modification on electrical properties of La(Cr0.2Mn0.2Fe0.2Co0.2Ni0.2)O3 high-entropy perovskite oxide films

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Effect of oxygen vacancy modification on electrical properties of La(Cr_0.2Mn_0.2Fe_0.2Co_0.2Ni_0.2)O₃ high-entropy perovskite oxide films