Effect of Mg doping on ferroelectric PST thin films for high tunable devices

X. T. Li, W. L. Huo, Chee Leung Mak, S. Sui, W. J. Weng, G. R. Han, G. Shen, P. Y. Du

Research output: Journal article publicationJournal articleAcademic researchpeer-review

22 Citations (Scopus)

Abstract

Pb0.4Sr0.6MgxTi1-xO3-x (PSMT) thin films were prepared on ITO/glass substrate by a sol-gel technique. It exhibited a typical polycrystalline cubic perovskite structure without any evidence of secondary phase formation. The crystallinity and the dielectric constant of the thin film increased with increasing Mg below x = 0.03 and then decreased with increasing Mg above x = 0.03. The effect of Mg doping content on the dielectric properties of the Pb0.4Sr0.6MgxTi1-xO3-x thin films also depended on the heat-treatment temperature. When Mg doping was light, the highest dielectric constant of the thin film appeared at high heat-treatment temperature. Whereas, when Mg doping was heavy, it appeared at low temperature. The maximum tunabilities of about 30%, 30% and 40% were obtained when Mg doping contents are 0.01, 0.03 and 0.05, respectively. This demonstrates that Mg can improve the microstructure of PST thin film and reduce its lattice distortion. In some conditions, doping Mg could increase the tunable behavior of the thin films. So Mg-doped PST thin films are good candidate for developing tunable devices.
Original languageEnglish
Pages (from-to)417-420
Number of pages4
JournalMaterials Chemistry and Physics
Volume108
Issue number2-3
DOIs
Publication statusPublished - 15 Apr 2008

Keywords

  • Dielectric properties
  • Sol-gel growth
  • Thin films

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics

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