Effect of ion implantation on layer inversion of Ni silicided poly-Si

P. S. Lee, K. L. Pey, D. Mangelinck, J. Ding, D. Z. Chi, T. Osipowicz, Jiyan Dai, L. Chan

Research output: Journal article publicationJournal articleAcademic researchpeer-review

9 Citations (Scopus)


The effect of ion implantation on the behavior and extent of layer inversion in Ni-silicided poly-Si was investigated. Two different implantation species, namely, BF2+and N2+, which affect the poly-Si grain growth were used. Retarded layer inversion was found with the ion-implanted poly-Si substrates. However, the formation of NiSi2takes place at 700°C, which is slightly lower than that on Si(100). The easy nucleation of NiSi2on poly-Si is implicitly related to the morphology perturbation.
Original languageEnglish
JournalJournal of the Electrochemical Society
Issue number9
Publication statusPublished - 1 Sep 2002
Externally publishedYes

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Renewable Energy, Sustainability and the Environment
  • Condensed Matter Physics
  • Surfaces, Coatings and Films
  • Electrochemistry
  • Materials Chemistry

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