Effect of ion implantation on layer inversion of Ni silicided poly-Si

P. S. Lee; K. L. Pey; D. Mangelinck; J. Ding; D. Z. Chi; T. Osipowicz; Jiyan Dai; L. Chan

doi:10.1149/1.1494828

Effect of ion implantation on layer inversion of Ni silicided poly-Si

P. S. Lee, K. L. Pey, D. Mangelinck, J. Ding, D. Z. Chi, T. Osipowicz, Jiyan Dai, L. Chan

Research output: Journal article publication › Journal article › Academic research › peer-review

9 Citations (Scopus)

Abstract

The effect of ion implantation on the behavior and extent of layer inversion in Ni-silicided poly-Si was investigated. Two different implantation species, namely, BF2+and N2+, which affect the poly-Si grain growth were used. Retarded layer inversion was found with the ion-implanted poly-Si substrates. However, the formation of NiSi2takes place at 700°C, which is slightly lower than that on Si(100). The easy nucleation of NiSi2on poly-Si is implicitly related to the morphology perturbation.

Original language	English
Journal	Journal of the Electrochemical Society
Volume	149
Issue number	9
DOIs	https://doi.org/10.1149/1.1494828
Publication status	Published - 1 Sept 2002
Externally published	Yes

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Renewable Energy, Sustainability and the Environment
Condensed Matter Physics
Surfaces, Coatings and Films
Electrochemistry
Materials Chemistry

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This output contributes to the following UN Sustainable Development Goals (SDGs)

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10.1149/1.1494828

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AU - Lee, P. S.

AU - Pey, K. L.

AU - Mangelinck, D.

AU - Ding, J.

AU - Chi, D. Z.

AU - Osipowicz, T.

AU - Dai, Jiyan

AU - Chan, L.

PY - 2002/9/1

Y1 - 2002/9/1

N2 - The effect of ion implantation on the behavior and extent of layer inversion in Ni-silicided poly-Si was investigated. Two different implantation species, namely, BF2+and N2+, which affect the poly-Si grain growth were used. Retarded layer inversion was found with the ion-implanted poly-Si substrates. However, the formation of NiSi2takes place at 700°C, which is slightly lower than that on Si(100). The easy nucleation of NiSi2on poly-Si is implicitly related to the morphology perturbation.

AB - The effect of ion implantation on the behavior and extent of layer inversion in Ni-silicided poly-Si was investigated. Two different implantation species, namely, BF2+and N2+, which affect the poly-Si grain growth were used. Retarded layer inversion was found with the ion-implanted poly-Si substrates. However, the formation of NiSi2takes place at 700°C, which is slightly lower than that on Si(100). The easy nucleation of NiSi2on poly-Si is implicitly related to the morphology perturbation.

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DO - 10.1149/1.1494828

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VL - 149

JO - Journal of the Electrochemical Society

JF - Journal of the Electrochemical Society

IS - 9

ER -

Effect of ion implantation on layer inversion of Ni silicided poly-Si

Abstract

ASJC Scopus subject areas

UN SDGs

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