Effect of heavy ion implantation on the properties of tetrahedral amorphous carbon film

J. R. Shi, Z. Sun, X. Shi, Shu Ping Lau, B. K. Tay, J. Pelzl

Research output: Journal article publicationJournal articleAcademic researchpeer-review

8 Citations (Scopus)

Abstract

The influence of energetic Au+beam implantation on tetrahedral amorphous carbon (ta-C) films prepared by the filtered cathodic vacuum arc technique was studied. The ta-C films were implanted by 2 MeV Au+with dose varying from 1012-3×1014cm-2. The as-deposited and ion implanted films were characterized using atomic force microscopy, Raman spectroscopy and ellipsometry. All films have a smooth surface morphology with RMS roughness less than 0.3 nm over an area of 1 μm2. The Raman spectra of the as-deposited and ion implanted films all show a G peak at approximately 1565 cm-1and a D peak at approximately 1395 cm-1. The intensity ratio of the D to G peak, ID/IG, remains unchanged (approximately 0.50) for films implanted with an ion dose below 1013cm-2, and increases to 2.10 for the film implanted with an ion dose of 3×1014cm-2. The Tauc optical band gap decreases from 2.05 eV for the as-deposited film to 1.40 eV for the film implanted with an ion dose of 1013cm-2, and becomes very close to zero for the films implanted with an ion dose greater than 3×1013cm-2. Both Raman and ellipsometric results show that a large percentage of carbon atoms become sp2-bonded in the films implanted with large ion doses.
Original languageEnglish
Pages (from-to)269-273
Number of pages5
JournalThin Solid Films
Volume377-378
DOIs
Publication statusPublished - 1 Dec 2000
Externally publishedYes

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

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