Abstract
Al-doped ZnO (AZO) films were prepared on glass substrates by radio frequency (RF) magnetron sputtering technology. Crystal structure, surface morphology, electrical properties and infrared reflection of the AZO films were systematically investigated by X-ray Diffraction (XRD), Atomic Force Microscopy (AFM), Hall measurement system and Fourier Transform infrared spectroscopy, respectively. In addition, the corresponding properties of AZO films annealing at different temperatures ranging from room temperature to 400 °C were also analyzed. The results indicate that the prepared AZO films exhibit highest ZnO (0 0 2) peak intensity and lowest electrical resistivity after annealing at 300 °C. And AZO film with a low resistivity value of 0.0185 ω-cm, a relatively high average infrared reflection of 40% can be acquired after the films were annealed at 300 °C. The high infrared reflection property of the AZO film makes it a promising candidate for future heat shielding film.
| Original language | English |
|---|---|
| Pages (from-to) | 163-168 |
| Number of pages | 6 |
| Journal | Solar Energy Materials and Solar Cells |
| Volume | 127 |
| DOIs | |
| Publication status | Published - 1 Jan 2014 |
Keywords
- AZO
- Heat treatment
- Infrared reflection
- RF magnetron sputtering
- Thin films
ASJC Scopus subject areas
- Renewable Energy, Sustainability and the Environment
- Electronic, Optical and Magnetic Materials
- Surfaces, Coatings and Films
