Effect of deposition temperature on ultra-low voltage resistive switching behavior of Fe-doped SrTiO3 films

Xue Jiang, Minglong Wei, Cheuk Ho Chan, Yingyue Wang, Ruilian Lai, Jianbo Wang, Jiyan Dai, Xiaoyan Qiu

Research output: Journal article publicationJournal articleAcademic researchpeer-review

3 Citations (Scopus)


The effect of deposition temperature on the microstructures and resistive switching properties of Fe-doped SrTiO3 (Fe-STO) films deposited via magnetron sputtering has been investigated. The as-deposited Fe-STO films change from amorphous to polycrystalline when the deposition temperature increases to 600 °C, but 800 °C-deposited Fe-STO films exhibit cracked surface morphologies with Sr-rich nanosheet segregation. Fe-STO films deposited at ≤600 °C exhibit reversible bipolar resistive switching behaviors with ultra-low switching voltages of <±0.6 V, while 450 °C-deposited Fe-STO films retain an ON/OFF resistance ratio of ∼105 after more than 2500 endurance cycles and 600 °C-deposited Fe-STO films exhibit three different resistive switching patterns in sequence. Fe-assisted oxygen-vacancy conductive filaments are responsible for the ultra-low voltage resistive switching behaviors of Fe-STO films.

Original languageEnglish
Article number102101
JournalApplied Physics Letters
Issue number10
Publication statusPublished - 9 Mar 2020

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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