Effect of deposition temperature on ultra-low voltage resistive switching behavior of Fe-doped SrTiO3 films

Xue Jiang; Minglong Wei; Cheuk Ho Chan; Yingyue Wang; Ruilian Lai; Jianbo Wang; Jiyan Dai; Xiaoyan Qiu

doi:10.1063/1.5123254

Effect of deposition temperature on ultra-low voltage resistive switching behavior of Fe-doped SrTiO₃ films

Xue Jiang, Minglong Wei, Cheuk Ho Chan, Yingyue Wang, Ruilian Lai, Jianbo Wang, Jiyan Dai, Xiaoyan Qiu

Research output: Journal article publication › Journal article › Academic research › peer-review

6 Citations (Scopus)

Abstract

The effect of deposition temperature on the microstructures and resistive switching properties of Fe-doped SrTiO₃ (Fe-STO) films deposited via magnetron sputtering has been investigated. The as-deposited Fe-STO films change from amorphous to polycrystalline when the deposition temperature increases to 600 °C, but 800 °C-deposited Fe-STO films exhibit cracked surface morphologies with Sr-rich nanosheet segregation. Fe-STO films deposited at ≤600 °C exhibit reversible bipolar resistive switching behaviors with ultra-low switching voltages of <±0.6 V, while 450 °C-deposited Fe-STO films retain an ON/OFF resistance ratio of ∼10⁵ after more than 2500 endurance cycles and 600 °C-deposited Fe-STO films exhibit three different resistive switching patterns in sequence. Fe-assisted oxygen-vacancy conductive filaments are responsible for the ultra-low voltage resistive switching behaviors of Fe-STO films.

Original language	English
Article number	102101
Journal	Applied Physics Letters
Volume	116
Issue number	10
DOIs	https://doi.org/10.1063/1.5123254
Publication status	Published - 9 Mar 2020

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.5123254

http://hdl.handle.net/10397/100238

Cite this

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title = "Effect of deposition temperature on ultra-low voltage resistive switching behavior of Fe-doped SrTiO3 films",

abstract = "The effect of deposition temperature on the microstructures and resistive switching properties of Fe-doped SrTiO3 (Fe-STO) films deposited via magnetron sputtering has been investigated. The as-deposited Fe-STO films change from amorphous to polycrystalline when the deposition temperature increases to 600 °C, but 800 °C-deposited Fe-STO films exhibit cracked surface morphologies with Sr-rich nanosheet segregation. Fe-STO films deposited at ≤600 °C exhibit reversible bipolar resistive switching behaviors with ultra-low switching voltages of <±0.6 V, while 450 °C-deposited Fe-STO films retain an ON/OFF resistance ratio of ∼105 after more than 2500 endurance cycles and 600 °C-deposited Fe-STO films exhibit three different resistive switching patterns in sequence. Fe-assisted oxygen-vacancy conductive filaments are responsible for the ultra-low voltage resistive switching behaviors of Fe-STO films.",

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AU - Jiang, Xue

AU - Wei, Minglong

AU - Chan, Cheuk Ho

AU - Wang, Yingyue

AU - Lai, Ruilian

AU - Wang, Jianbo

AU - Dai, Jiyan

AU - Qiu, Xiaoyan

PY - 2020/3/9

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AB - The effect of deposition temperature on the microstructures and resistive switching properties of Fe-doped SrTiO3 (Fe-STO) films deposited via magnetron sputtering has been investigated. The as-deposited Fe-STO films change from amorphous to polycrystalline when the deposition temperature increases to 600 °C, but 800 °C-deposited Fe-STO films exhibit cracked surface morphologies with Sr-rich nanosheet segregation. Fe-STO films deposited at ≤600 °C exhibit reversible bipolar resistive switching behaviors with ultra-low switching voltages of <±0.6 V, while 450 °C-deposited Fe-STO films retain an ON/OFF resistance ratio of ∼105 after more than 2500 endurance cycles and 600 °C-deposited Fe-STO films exhibit three different resistive switching patterns in sequence. Fe-assisted oxygen-vacancy conductive filaments are responsible for the ultra-low voltage resistive switching behaviors of Fe-STO films.

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Effect of deposition temperature on ultra-low voltage resistive switching behavior of Fe-doped SrTiO₃ films

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