Effect of biaxial strain induced by piezoelectric PMN-PT on the upconversion photoluminescence of BaTiO3:Yb/Er thin films

Zhenping Wu; Yang Zhang; Gongxun Bai; Weihua Tang; Ju Gao; Jianhua Hao

doi:10.1364/OE.22.029014

Effect of biaxial strain induced by piezoelectric PMN-PT on the upconversion photoluminescence of BaTiO₃:Yb/Er thin films

Zhenping Wu, Yang Zhang, Gongxun Bai, Weihua Tang, Ju Gao, Jianhua Hao

Research output: Journal article publication › Journal article › Academic research › peer-review

47 Citations (Scopus)

Abstract

Thin films of Yb3+/Er3+co-doped BaTiO3(BTO:Yb/Er) have been epitaxially grown on piezoelectric Pb(Mg1/3Nb2/3) 0.7Ti0.3O3(PMN-PT) substrates. Biaxial strain can be effectively controlled by applying electric field on PMN-PT substrate. A reversible, in situ and dynamic modification of upconversion photoluminescence in BTO:Yb/Er film was observed via converse piezoelectric effect. Detailed analysis and in situ X-ray diffraction indicate that such modulations are possibly due to the change in the lattice deformation of the thin films. This result suggests an alternative method to rationally tune the upconversion emissions via strain engineering.

Original language	English
Pages (from-to)	29014-29019
Number of pages	6
Journal	Optics Express
Volume	22
Issue number	23
DOIs	https://doi.org/10.1364/OE.22.029014
Publication status	Published - 17 Nov 2014

ASJC Scopus subject areas

Atomic and Molecular Physics, and Optics

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10.1364/OE.22.029014

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title = "Effect of biaxial strain induced by piezoelectric PMN-PT on the upconversion photoluminescence of BaTiO3:Yb/Er thin films",

abstract = "Thin films of Yb3+/Er3+co-doped BaTiO3(BTO:Yb/Er) have been epitaxially grown on piezoelectric Pb(Mg1/3Nb2/3) 0.7Ti0.3O3(PMN-PT) substrates. Biaxial strain can be effectively controlled by applying electric field on PMN-PT substrate. A reversible, in situ and dynamic modification of upconversion photoluminescence in BTO:Yb/Er film was observed via converse piezoelectric effect. Detailed analysis and in situ X-ray diffraction indicate that such modulations are possibly due to the change in the lattice deformation of the thin films. This result suggests an alternative method to rationally tune the upconversion emissions via strain engineering.",

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T1 - Effect of biaxial strain induced by piezoelectric PMN-PT on the upconversion photoluminescence of BaTiO3:Yb/Er thin films

AU - Wu, Zhenping

AU - Zhang, Yang

AU - Bai, Gongxun

AU - Tang, Weihua

AU - Gao, Ju

AU - Hao, Jianhua

PY - 2014/11/17

Y1 - 2014/11/17

N2 - Thin films of Yb3+/Er3+co-doped BaTiO3(BTO:Yb/Er) have been epitaxially grown on piezoelectric Pb(Mg1/3Nb2/3) 0.7Ti0.3O3(PMN-PT) substrates. Biaxial strain can be effectively controlled by applying electric field on PMN-PT substrate. A reversible, in situ and dynamic modification of upconversion photoluminescence in BTO:Yb/Er film was observed via converse piezoelectric effect. Detailed analysis and in situ X-ray diffraction indicate that such modulations are possibly due to the change in the lattice deformation of the thin films. This result suggests an alternative method to rationally tune the upconversion emissions via strain engineering.

AB - Thin films of Yb3+/Er3+co-doped BaTiO3(BTO:Yb/Er) have been epitaxially grown on piezoelectric Pb(Mg1/3Nb2/3) 0.7Ti0.3O3(PMN-PT) substrates. Biaxial strain can be effectively controlled by applying electric field on PMN-PT substrate. A reversible, in situ and dynamic modification of upconversion photoluminescence in BTO:Yb/Er film was observed via converse piezoelectric effect. Detailed analysis and in situ X-ray diffraction indicate that such modulations are possibly due to the change in the lattice deformation of the thin films. This result suggests an alternative method to rationally tune the upconversion emissions via strain engineering.

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Effect of biaxial strain induced by piezoelectric PMN-PT on the upconversion photoluminescence of BaTiO₃:Yb/Er thin films

Abstract

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