An edge-emitting ultraviolet n-ZnO:Al/i-ZnO/p-GaN heterojunction light-emitting diode with a rib waveguide is fabricated by filtered cathodic vacuum arc technique at low deposition temperature (∼150 °C). Electroluminescence with emission peak at 387 nm is observed. Good correlation between electro- and photo- luminescence spectra suggests that the i-ZnO layer of the heteroj unction supports radiative excitonic recombination. Furthermore, it is found that the emission intensity can be enhanced by °5 times due to the presence of the rib waveguide. Only fundamental TE and TM polarizations are supported inside the rib waveguide and the intensity of TE polarization is μ2.2 time larger than that of TM polarization.
ASJC Scopus subject areas
- Atomic and Molecular Physics, and Optics