Abstract
Memristor is a novel passive electronic element with resistance-switching dynamics. Due to the threshold property and the variable conductivity of the memristive element, its composite circuits are promising for the implementation of logic operations. In this paper, a flexible logic circuit based on the threshold-type memristor and the mature complementary metal-oxide-semiconductor (CMOS) technology is designed for the realization of Boolean logic operations. Specifically, the proposed method is able to perform the NAND, AND, OR, and NOR gate operations through two phases, i.e. the writing operation and the reading operation. In such implementation, the total delay is very small especially for time-sequence inputs. Furthermore, for existing memristor-based logic implementation, a contrastive analysis with relevant computer simulations is carried out. The experimental results indicate that the proposed method is capable of realizing all basic Boolean logic operations, and some more complicated cascaded logic operations with more compact circuit structures, higher efficiency, and lower operating cost.
Original language | English |
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Article number | 1850149 |
Journal | International Journal of Bifurcation and Chaos |
Volume | 28 |
Issue number | 12 |
DOIs | |
Publication status | Published - 1 Nov 2018 |
Keywords
- Boolean logic operation
- cascaded logic operations
- contrastive analysis
- Memristor
ASJC Scopus subject areas
- Modelling and Simulation
- Engineering (miscellaneous)
- General
- Applied Mathematics