Abstract
The optical nonlinear properties of the SiN/Sb/SiN thin film are investigated. Imaging results of the near-field intensity gradients showed the intensity of the focused spot through the glass/SiN(170 nm)/Sb(15 nm)/SiN(20 nm) sample included both propagating and evanescent field intensity. The surface plasmons of the Sb/SiN interface excited by the focused laser beam play an important role in the near-field optical recording of super resolution optical near-field structure. The focused spot sizes of the evanescent field intensity can be manipulated by the detecting sensitivity of photomultiplier tube, while the focused spot sizes of the propagating intensity remained the same for different sensitivity.
Original language | English |
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Pages (from-to) | 429-431 |
Number of pages | 3 |
Journal | Proceedings of SPIE - The International Society for Optical Engineering |
Volume | 3864 |
Issue number | SUPPL. |
Publication status | Published - 12 Jul 1999 |
Externally published | Yes |
Event | Proceedings of the 1999 Joint International Symposium on Optical Memory and Optical Optical Data Storage (ISOM/ODS'99) - Koloa, HI, USA Duration: 12 Jul 1999 → 15 Jul 1999 |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Computer Science Applications
- Applied Mathematics
- Electrical and Electronic Engineering