Dynamic substrate bias inverter for low voltage applications

C. K. Lo; Philip Ching Ho Chan

Dynamic substrate bias inverter for low voltage applications

C. K. Lo, Philip Ching Ho Chan

Research output: Chapter in book / Conference proceeding › Conference article published in proceeding or book › Academic research › peer-review

2 Citations (Scopus)

Abstract

A new type of inverter for low voltage and low power applications is proposed. It is designed so that the substrate bias voltage can be dynamically adjusted. The bulk is biased positively in the active mode to decrease the threshold voltage Vth and thus provide more output drive, while in the standby mode the substrate bias is not applied to maintain a high Vth, therefore reduce the leakage current. Comparison of performance between the proposed dynamic threshold inverter DTINV and conventional CMOS inverter are made.

Original language	English
Title of host publication	Proceedings of the IEEE Hong Kong Electron Devices Meeting
Publisher	IEEE
Pages	19-22
Number of pages	4
Publication status	Published - 1 Dec 1997
Externally published	Yes
Event	Proceedings of the 1997 IEEE Hong Kong Electron Devices Meeting - Hong Kong, Hong Kong Duration: 30 Aug 1997 → 30 Aug 1997

Conference

Conference	Proceedings of the 1997 IEEE Hong Kong Electron Devices Meeting
Country/Territory	Hong Kong
City	Hong Kong
Period	30/08/97 → 30/08/97

ASJC Scopus subject areas

Engineering(all)

Cite this

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title = "Dynamic substrate bias inverter for low voltage applications",

abstract = "A new type of inverter for low voltage and low power applications is proposed. It is designed so that the substrate bias voltage can be dynamically adjusted. The bulk is biased positively in the active mode to decrease the threshold voltage Vth and thus provide more output drive, while in the standby mode the substrate bias is not applied to maintain a high Vth, therefore reduce the leakage current. Comparison of performance between the proposed dynamic threshold inverter DTINV and conventional CMOS inverter are made.",

author = "Lo, {C. K.} and Chan, {Philip Ching Ho}",

year = "1997",

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language = "English",

pages = "19--22",

booktitle = "Proceedings of the IEEE Hong Kong Electron Devices Meeting",

publisher = "IEEE",

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note = "Proceedings of the 1997 IEEE Hong Kong Electron Devices Meeting ; Conference date: 30-08-1997 Through 30-08-1997",

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T1 - Dynamic substrate bias inverter for low voltage applications

AU - Lo, C. K.

AU - Chan, Philip Ching Ho

PY - 1997/12/1

Y1 - 1997/12/1

N2 - A new type of inverter for low voltage and low power applications is proposed. It is designed so that the substrate bias voltage can be dynamically adjusted. The bulk is biased positively in the active mode to decrease the threshold voltage Vth and thus provide more output drive, while in the standby mode the substrate bias is not applied to maintain a high Vth, therefore reduce the leakage current. Comparison of performance between the proposed dynamic threshold inverter DTINV and conventional CMOS inverter are made.

AB - A new type of inverter for low voltage and low power applications is proposed. It is designed so that the substrate bias voltage can be dynamically adjusted. The bulk is biased positively in the active mode to decrease the threshold voltage Vth and thus provide more output drive, while in the standby mode the substrate bias is not applied to maintain a high Vth, therefore reduce the leakage current. Comparison of performance between the proposed dynamic threshold inverter DTINV and conventional CMOS inverter are made.

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M3 - Conference article published in proceeding or book

SP - 19

EP - 22

BT - Proceedings of the IEEE Hong Kong Electron Devices Meeting

PB - IEEE

T2 - Proceedings of the 1997 IEEE Hong Kong Electron Devices Meeting

Y2 - 30 August 1997 through 30 August 1997

ER -

Dynamic substrate bias inverter for low voltage applications

Abstract

Conference

ASJC Scopus subject areas

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