Abstract
A new type of inverter for low voltage and low power applications is proposed. It is designed so that the substrate bias voltage can be dynamically adjusted. The bulk is biased positively in the active mode to decrease the threshold voltage Vth and thus provide more output drive, while in the standby mode the substrate bias is not applied to maintain a high Vth, therefore reduce the leakage current. Comparison of performance between the proposed dynamic threshold inverter DTINV and conventional CMOS inverter are made.
Original language | English |
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Title of host publication | Proceedings of the IEEE Hong Kong Electron Devices Meeting |
Publisher | IEEE |
Pages | 19-22 |
Number of pages | 4 |
Publication status | Published - 1 Dec 1997 |
Externally published | Yes |
Event | Proceedings of the 1997 IEEE Hong Kong Electron Devices Meeting - Hong Kong, Hong Kong Duration: 30 Aug 1997 → 30 Aug 1997 |
Conference
Conference | Proceedings of the 1997 IEEE Hong Kong Electron Devices Meeting |
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Country/Territory | Hong Kong |
City | Hong Kong |
Period | 30/08/97 → 30/08/97 |
ASJC Scopus subject areas
- Engineering(all)