Dynamic FET-based memristor with relaxor antiferroelectric HfO2 gate dielectric for fast reservoir computing,

Wenmin Zhong, Xubing Lu, Xingui Tang, Jiyan Dai

Research output: Journal article publication › Journal article › Academic research › peer-review

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@article{66314fd76b954044b130a5f3bfa13e28,

title = "Dynamic FET-based memristor with relaxor antiferroelectric HfO2 gate dielectric for fast reservoir computing,",

author = "Wenmin Zhong and Xubing Lu and Xingui Tang and Jiyan Dai",

year = "2023",

month = aug,

doi = "10.1016/j.mtnano.2023.100357",

language = "English",

volume = "23",

pages = "1 to 7",

journal = "Materials Today Nano",

issn = "2588-8420",

publisher = "Elsevier Ltd",

}

TY - JOUR

T1 - Dynamic FET-based memristor with relaxor antiferroelectric HfO2 gate dielectric for fast reservoir computing,

AU - Zhong, Wenmin

AU - Lu, Xubing

AU - Tang, Xingui

AU - Dai, Jiyan

PY - 2023/8

Y1 - 2023/8

U2 - 10.1016/j.mtnano.2023.100357

DO - 10.1016/j.mtnano.2023.100357

M3 - Journal article

SN - 2588-8420

VL - 23

SP - 1 to 7

JO - Materials Today Nano

JF - Materials Today Nano

ER -