Droop improvement in blue InGaN light-emitting diodes with GaN/InGaN superlattice barriers

Jin Hui Tong, Bi Jun Zhao, Xing Fu Wang, Xin Chen, Zhi Wei Ren, Dan Wei Li, Xiang Jing Zhuo, Jun Zhang, Han Xiang Yi, Shu Ti Li

Research output: Journal article publicationJournal articleAcademic researchpeer-review

6 Citations (Scopus)

Abstract

GaN/InGaN superlattice barriers are used in InGaN-based light-emitting diodes (LEDs). The electrostatic field in the quantum wells, electron hole wavefunction overlap, carrier concentration, spontaneous emission spectrum, light-current performance curve, and internal quantum efficiency are numerically investigated using the APSYS simulation software. It is found that the structure with GaN/InGaN superlattice barriers shows improved light output power, and lower current leakage and efficiency droop. According to our numerical simulation and analysis, these improvements in the electrical and optical characteristics are mainly attributed to the alleviation of the electrostatic field in the active region.

Original languageEnglish
Article number068505
JournalChinese Physics B
Volume22
Issue number6
DOIs
Publication statusPublished - Jun 2013
Externally publishedYes

Keywords

  • electrostatic field
  • GaN-based light-emitting diodes
  • GaN/InGaN superlattice barriers

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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