Droop improvement in blue InGaN light-emitting diodes with GaN/InGaN superlattice barriers

Jin Hui Tong; Bi Jun Zhao; Xing Fu Wang; Xin Chen; Zhi Wei Ren; Dan Wei Li; Xiang Jing Zhuo; Jun Zhang; Han Xiang Yi; Shu Ti Li

doi:10.1088/1674-1056/22/6/068505

Droop improvement in blue InGaN light-emitting diodes with GaN/InGaN superlattice barriers

Jin Hui Tong, Bi Jun Zhao, Xing Fu Wang, Xin Chen, Zhi Wei Ren, Dan Wei Li, Xiang Jing Zhuo, Jun Zhang, Han Xiang Yi, Shu Ti Li

Department of Electrical and Electronic Engineering

Research output: Journal article publication › Journal article › Academic research › peer-review

6 Citations (Scopus)

Abstract

GaN/InGaN superlattice barriers are used in InGaN-based light-emitting diodes (LEDs). The electrostatic field in the quantum wells, electron hole wavefunction overlap, carrier concentration, spontaneous emission spectrum, light-current performance curve, and internal quantum efficiency are numerically investigated using the APSYS simulation software. It is found that the structure with GaN/InGaN superlattice barriers shows improved light output power, and lower current leakage and efficiency droop. According to our numerical simulation and analysis, these improvements in the electrical and optical characteristics are mainly attributed to the alleviation of the electrostatic field in the active region.

Original language	English
Article number	068505
Journal	Chinese Physics B
Volume	22
Issue number	6
DOIs	https://doi.org/10.1088/1674-1056/22/6/068505
Publication status	Published - Jun 2013

Keywords

electrostatic field
GaN-based light-emitting diodes
GaN/InGaN superlattice barriers

ASJC Scopus subject areas

General Physics and Astronomy

More information

10.1088/1674-1056/22/6/068505

Cite this

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title = "Droop improvement in blue InGaN light-emitting diodes with GaN/InGaN superlattice barriers",

abstract = "GaN/InGaN superlattice barriers are used in InGaN-based light-emitting diodes (LEDs). The electrostatic field in the quantum wells, electron hole wavefunction overlap, carrier concentration, spontaneous emission spectrum, light-current performance curve, and internal quantum efficiency are numerically investigated using the APSYS simulation software. It is found that the structure with GaN/InGaN superlattice barriers shows improved light output power, and lower current leakage and efficiency droop. According to our numerical simulation and analysis, these improvements in the electrical and optical characteristics are mainly attributed to the alleviation of the electrostatic field in the active region.",

keywords = "electrostatic field, GaN-based light-emitting diodes, GaN/InGaN superlattice barriers",

author = "Tong, {Jin Hui} and Zhao, {Bi Jun} and Wang, {Xing Fu} and Xin Chen and Ren, {Zhi Wei} and Li, {Dan Wei} and Zhuo, {Xiang Jing} and Jun Zhang and Yi, {Han Xiang} and Li, {Shu Ti}",

year = "2013",

month = jun,

doi = "10.1088/1674-1056/22/6/068505",

language = "English",

volume = "22",

journal = "Chinese Physics B",

issn = "1674-1056",

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TY - JOUR

T1 - Droop improvement in blue InGaN light-emitting diodes with GaN/InGaN superlattice barriers

AU - Tong, Jin Hui

AU - Zhao, Bi Jun

AU - Wang, Xing Fu

AU - Chen, Xin

AU - Ren, Zhi Wei

AU - Li, Dan Wei

AU - Zhuo, Xiang Jing

AU - Zhang, Jun

AU - Yi, Han Xiang

AU - Li, Shu Ti

PY - 2013/6

Y1 - 2013/6

N2 - GaN/InGaN superlattice barriers are used in InGaN-based light-emitting diodes (LEDs). The electrostatic field in the quantum wells, electron hole wavefunction overlap, carrier concentration, spontaneous emission spectrum, light-current performance curve, and internal quantum efficiency are numerically investigated using the APSYS simulation software. It is found that the structure with GaN/InGaN superlattice barriers shows improved light output power, and lower current leakage and efficiency droop. According to our numerical simulation and analysis, these improvements in the electrical and optical characteristics are mainly attributed to the alleviation of the electrostatic field in the active region.

AB - GaN/InGaN superlattice barriers are used in InGaN-based light-emitting diodes (LEDs). The electrostatic field in the quantum wells, electron hole wavefunction overlap, carrier concentration, spontaneous emission spectrum, light-current performance curve, and internal quantum efficiency are numerically investigated using the APSYS simulation software. It is found that the structure with GaN/InGaN superlattice barriers shows improved light output power, and lower current leakage and efficiency droop. According to our numerical simulation and analysis, these improvements in the electrical and optical characteristics are mainly attributed to the alleviation of the electrostatic field in the active region.

KW - electrostatic field

KW - GaN-based light-emitting diodes

KW - GaN/InGaN superlattice barriers

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U2 - 10.1088/1674-1056/22/6/068505

DO - 10.1088/1674-1056/22/6/068505

M3 - Journal article

AN - SCOPUS:84880557042

SN - 1674-1056

VL - 22

JO - Chinese Physics B

JF - Chinese Physics B

IS - 6

M1 - 068505

ER -

Droop improvement in blue InGaN light-emitting diodes with GaN/InGaN superlattice barriers

Abstract

Keywords

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