Dose radiation effects in FinFETs

Xusheng Wu, Philip Ching Ho Chan, A. Orozco, A. Vazquez, A. Chaudhry, J. P. Colinge

Research output: Journal article publicationJournal articleAcademic researchpeer-review

26 Citations (Scopus)


This paper reports the effects of dose irradiation on FinFETs. A threshold voltage shift of 100 mV is observed after irradiation at a dose of 300 krad(SiO2). The creation of oxide charges reduces the threshold voltage at the bottom of the device, while the generation of interface traps increases the threshold voltage at the sidewalls of the fin. The leakage current and the subthreshold slope do not degrade appreciably after irradiation to 300 krad(SiO2).
Original languageEnglish
Pages (from-to)287-290
Number of pages4
JournalSolid-State Electronics
Issue number2
Publication statusPublished - 1 Feb 2006
Externally publishedYes


  • Insulated gate FETs
  • MOS devices
  • Radiation effects
  • Silicon-on-insulator technology

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry


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