Dose radiation effects in FinFETs

Xusheng Wu; Philip Ching Ho Chan; A. Orozco; A. Vazquez; A. Chaudhry; J. P. Colinge

doi:10.1016/j.sse.2005.12.017

Dose radiation effects in FinFETs

Xusheng Wu, Philip Ching Ho Chan, A. Orozco, A. Vazquez, A. Chaudhry, J. P. Colinge

Research output: Journal article publication › Journal article › Academic research › peer-review

27 Citations (Scopus)

Abstract

This paper reports the effects of dose irradiation on FinFETs. A threshold voltage shift of 100 mV is observed after irradiation at a dose of 300 krad(SiO2). The creation of oxide charges reduces the threshold voltage at the bottom of the device, while the generation of interface traps increases the threshold voltage at the sidewalls of the fin. The leakage current and the subthreshold slope do not degrade appreciably after irradiation to 300 krad(SiO2).

Original language	English
Pages (from-to)	287-290
Number of pages	4
Journal	Solid-State Electronics
Volume	50
Issue number	2
DOIs	https://doi.org/10.1016/j.sse.2005.12.017
Publication status	Published - 1 Feb 2006
Externally published	Yes

Keywords

Insulated gate FETs
MOS devices
Radiation effects
Silicon-on-insulator technology

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

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10.1016/j.sse.2005.12.017

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AU - Chan, Philip Ching Ho

AU - Orozco, A.

AU - Vazquez, A.

AU - Chaudhry, A.

AU - Colinge, J. P.

PY - 2006/2/1

Y1 - 2006/2/1

N2 - This paper reports the effects of dose irradiation on FinFETs. A threshold voltage shift of 100 mV is observed after irradiation at a dose of 300 krad(SiO2). The creation of oxide charges reduces the threshold voltage at the bottom of the device, while the generation of interface traps increases the threshold voltage at the sidewalls of the fin. The leakage current and the subthreshold slope do not degrade appreciably after irradiation to 300 krad(SiO2).

AB - This paper reports the effects of dose irradiation on FinFETs. A threshold voltage shift of 100 mV is observed after irradiation at a dose of 300 krad(SiO2). The creation of oxide charges reduces the threshold voltage at the bottom of the device, while the generation of interface traps increases the threshold voltage at the sidewalls of the fin. The leakage current and the subthreshold slope do not degrade appreciably after irradiation to 300 krad(SiO2).

KW - Insulated gate FETs

KW - MOS devices

KW - Radiation effects

KW - Silicon-on-insulator technology

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JO - Solid-State Electronics

JF - Solid-State Electronics

IS - 2

ER -

Dose radiation effects in FinFETs

Abstract

Keywords

ASJC Scopus subject areas

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