TY - JOUR
T1 - Doping Process of 2D Materials Based on the Selective Migration of Dopants to the Interface of Liquid Metals
AU - Ghasemian, Mohammad B.
AU - Zavabeti, Ali
AU - Mousavi, Maedehsadat
AU - Murdoch, Billy J.
AU - Christofferson, Andrew J.
AU - Meftahi, Nastaran
AU - Tang, Jianbo
AU - Han, Jialuo
AU - Jalili, Rouhollah
AU - Allioux, Francois Marie
AU - Mayyas, Mohannad
AU - Chen, Zibin
AU - Elbourne, Aaron
AU - McConville, Chris F.
AU - Russo, Salvy P.
AU - Ringer, Simon
AU - Kalantar-Zadeh, Kourosh
N1 - Funding Information:
The authors would like to acknowledge the Australian Research Council (ARC) Laureate Fellowship grant (FL180100053) and ARC Center of Excellence FLEET (CE170100039) for the financial coverage of this work. The authors also acknowledge the facilities and the scientific and technical assistance of Microscopy Australia at the Electron Microscope Unit (EMU) within the Mark Wainwright Analytical Centre (MWAC) at UNSW Sydney, and Sydney Microscopy & Microanalysis, the University of Sydney node of Microscopy Australia. This research was undertaken with the assistance of supercomputing resources from the National Computational Infrastructure (NCI), which is supported by the Australian Government, under the National Computational Merit Allocation Scheme (project kl59).
Funding Information:
The authors would like to acknowledge the Australian Research Council (ARC) Laureate Fellowship grant (FL180100053) and ARC Center of Excellence FLEET (CE170100039) for the financial coverage of this work. The authors also acknowledge the facilities and the scientific and technical assistance of Microscopy Australia at the Electron Microscope Unit (EMU) within the Mark Wainwright Analytical Centre (MWAC) at UNSW Sydney, and Sydney Microscopy & Microanalysis, the University of Sydney node of Microscopy Australia. This research was undertaken with the assistance of supercomputing resources from the National Computational Infrastructure (NCI), which is supported by the Australian Government, under the National Computational Merit Allocation Scheme (project kl59).
Publisher Copyright:
© 2021 Wiley-VCH GmbH.
PY - 2021/10/28
Y1 - 2021/10/28
N2 - The introduction of trace impurities within the doping processes of semiconductors is still a technological challenge for the electronics industries. By taking advantage of the selective enrichment of liquid metal interfaces, and harvesting the doped metal oxide semiconductor layers, the complexity of the process can be mitigated and a high degree of control over the outcomes can be achieved. Here, a mechanism of natural filtering for the preparation of doped 2D semiconducting sheets based on the different migration tendencies of metallic elements in the bulk competing for enriching the interfaces is proposed. As a model, liquid metal alloys with different weight ratios of Sn and Bi in the bulk are employed for harvesting Bi2O3-doped SnO nanosheets. In this model, Sn shows a much stronger tendency than Bi to occupy surface sites of the Bi–Sn alloys, even at the very high concentrations of Bi in the bulk. This provides the opportunity for creating SnO 2D sheets with tightly controlled Bi2O3 dopants. By way of example, it is demonstrated how such nanosheets could be made selective to both reducing and oxidizing environmental gases. The process demonstrated here offers significant opportunities for future synthesis and fabrication processes in the electronics industries.
AB - The introduction of trace impurities within the doping processes of semiconductors is still a technological challenge for the electronics industries. By taking advantage of the selective enrichment of liquid metal interfaces, and harvesting the doped metal oxide semiconductor layers, the complexity of the process can be mitigated and a high degree of control over the outcomes can be achieved. Here, a mechanism of natural filtering for the preparation of doped 2D semiconducting sheets based on the different migration tendencies of metallic elements in the bulk competing for enriching the interfaces is proposed. As a model, liquid metal alloys with different weight ratios of Sn and Bi in the bulk are employed for harvesting Bi2O3-doped SnO nanosheets. In this model, Sn shows a much stronger tendency than Bi to occupy surface sites of the Bi–Sn alloys, even at the very high concentrations of Bi in the bulk. This provides the opportunity for creating SnO 2D sheets with tightly controlled Bi2O3 dopants. By way of example, it is demonstrated how such nanosheets could be made selective to both reducing and oxidizing environmental gases. The process demonstrated here offers significant opportunities for future synthesis and fabrication processes in the electronics industries.
KW - atomically thin materials
KW - bismuth
KW - doping
KW - liquid metals
KW - tin
UR - http://www.scopus.com/inward/record.url?scp=85114703557&partnerID=8YFLogxK
U2 - 10.1002/adma.202104793
DO - 10.1002/adma.202104793
M3 - Journal article
C2 - 34510605
AN - SCOPUS:85114703557
SN - 0935-9648
VL - 33
JO - Advanced Materials
JF - Advanced Materials
IS - 43
M1 - 2104793
ER -