Doping of two-dimensional MoS2by high energy ion implantation

Kang Xu, Yuda Zhao, Ziyuan Lin, Yan Long, Yi Wang, Mansun Chan, Yang Chai

Research output: Journal article publicationJournal articleAcademic researchpeer-review

30 Citations (Scopus)


Two-dimensional (2D) materials have been demonstrated to be promising candidates for next generation electronic circuits. Analogues to conventional Si-based semiconductors, p- and n-doping of 2D materials are essential for building complementary circuits. Controllable and effective doping strategies require large tunability of the doping level and negligible structural damage to ultrathin 2D materials. In this work, we demonstrate a doping method utilizing a conventional high-energy ion-implantation machine. Before the implantation, a Polymethylmethacrylate (PMMA) protective layer is used to decelerate the dopant ions and minimize the structural damage to MoS2, thus aggregating the dopants inside MoS2flakes. By optimizing the implantation energy and fluence, phosphorus dopants are incorporated into MoS2flakes. Our Raman and high-resolution transmission electron microscopy (HRTEM) results show that only negligibly structural damage is introduced to the MoS2lattice during the implantation. P-doping effect by the incorporation of p+is demonstrated by Photoluminescence (PL) and electrical characterizations. Thin PMMA protection layer leads to large kinetic damage but also a more significant doping effect. Also, MoS2with large thickness shows less kinetic damage. This doping method makes use of existing infrastructures in the semiconductor industry and can be extended to other 2D materials and dopant species as well.
Original languageEnglish
Article number124002
JournalSemiconductor Science and Technology
Issue number12
Publication statusPublished - 26 Oct 2017


  • doping
  • field effect transistor
  • ion implantation
  • Raman spectroscopy
  • two dimensional materials

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry


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