Doping, Contact and Interface Engineering of Two-Dimensional Layered Transition Metal Dichalcogenides Transistors

Yuda Zhao, Kang Xu, Feng Pan, Changjian Zhou, Feichi Zhou, Yang Chai

Research output: Journal article publicationReview articleAcademic researchpeer-review

103 Citations (Scopus)

Abstract

KGaA, Weinheim Owing to an ultrathin body, atomic scale smoothness, dangling bond-free surface, and sizable bandgap, transistors based on two-dimensional (2D) layered semiconductors show the potential of scalability down to the nanoscale, high-density three-dimensional integration, and superior performance in terms of better electrostatic control and smaller power consumption compared with conventional three-dimensional semiconductors (Si, Ge, and III-V compound materials). To apply 2D layered materials into complementary metal-oxide-semiconductor logic circuits, it is important to modulate the carrier type and density in a controllable manner, and engineer the contact (between metal electrode and 2D semiconductor) and the interface (between dielectrics and semiconducting channel) to get close to their intrinsic carrier mobility. In this review, the most widely studied 2D transition metal dichalcogenides (TMD) are focused on, and an overview of recent progress on doping, contact, and interface engineering of the TMD-based field-effect transistors is provided.
Original languageEnglish
Article number1603484
JournalAdvanced Functional Materials
Volume27
Issue number19
DOIs
Publication statusPublished - 18 May 2017

Keywords

  • 2D materials
  • contact
  • doping
  • interface
  • transition metal dichalcogenides

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Biomaterials
  • Condensed Matter Physics
  • Electrochemistry

Cite this