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Dislocation density and strain distribution in SrTiO3film grown on (1 1 0) DyScO3substrate

  • Z. Y. Zhai
  • , X. S. Wu
  • , H. L. Cai
  • , X. M. Lu
  • , Jianhua Hao
  • , Ju Gao
  • , W. S. Tan
  • , Q. J. Jia
  • , H. H. Wang
  • , Y. Z. Wang

Research output: Journal article publicationJournal articleAcademic researchpeer-review

Abstract

High quality SrTiO3thin film on (1 1 0) DyScO3substrate is grown by laser molecular beam epitaxy. The lattice strain resulting from the lattice mismatch between the substrate and the film relaxes gradually with depth. A critical thickness of about 30 nm for sharp strain relaxation is observed. The dislocation density, which forms to relax the lattice strain, is estimated to be about 108cm-2according to the high resolution x-ray diffraction. The edge dislocation density is slightly larger than that of the screw ones.
Original languageEnglish
Article number105307
JournalJournal of Physics D: Applied Physics
Volume42
Issue number10
DOIs
Publication statusPublished - 18 Sept 2009

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Acoustics and Ultrasonics
  • Surfaces, Coatings and Films

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