Dislocation density and strain distribution in SrTiO3film grown on (1 1 0) DyScO3substrate

Z. Y. Zhai; X. S. Wu; H. L. Cai; X. M. Lu; Jianhua Hao; Ju Gao; W. S. Tan; Q. J. Jia; H. H. Wang; Y. Z. Wang

doi:10.1088/0022-3727/42/10/105307

Dislocation density and strain distribution in SrTiO₃film grown on (1 1 0) DyScO₃substrate

Z. Y. Zhai, X. S. Wu, H. L. Cai, X. M. Lu, Jianhua Hao, Ju Gao, W. S. Tan, Q. J. Jia, H. H. Wang, Y. Z. Wang

Research output: Journal article publication › Journal article › Academic research › peer-review

24 Citations (Scopus)

Abstract

High quality SrTiO3thin film on (1 1 0) DyScO3substrate is grown by laser molecular beam epitaxy. The lattice strain resulting from the lattice mismatch between the substrate and the film relaxes gradually with depth. A critical thickness of about 30 nm for sharp strain relaxation is observed. The dislocation density, which forms to relax the lattice strain, is estimated to be about 108cm-2according to the high resolution x-ray diffraction. The edge dislocation density is slightly larger than that of the screw ones.

Original language	English
Article number	105307
Journal	Journal of Physics D: Applied Physics
Volume	42
Issue number	10
DOIs	https://doi.org/10.1088/0022-3727/42/10/105307
Publication status	Published - 18 Sept 2009

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Acoustics and Ultrasonics
Surfaces, Coatings and Films

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10.1088/0022-3727/42/10/105307

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abstract = "High quality SrTiO3thin film on (1 1 0) DyScO3substrate is grown by laser molecular beam epitaxy. The lattice strain resulting from the lattice mismatch between the substrate and the film relaxes gradually with depth. A critical thickness of about 30 nm for sharp strain relaxation is observed. The dislocation density, which forms to relax the lattice strain, is estimated to be about 108cm-2according to the high resolution x-ray diffraction. The edge dislocation density is slightly larger than that of the screw ones.",

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AU - Zhai, Z. Y.

AU - Wu, X. S.

AU - Cai, H. L.

AU - Lu, X. M.

AU - Hao, Jianhua

AU - Gao, Ju

AU - Tan, W. S.

AU - Jia, Q. J.

AU - Wang, H. H.

AU - Wang, Y. Z.

PY - 2009/9/18

Y1 - 2009/9/18

N2 - High quality SrTiO3thin film on (1 1 0) DyScO3substrate is grown by laser molecular beam epitaxy. The lattice strain resulting from the lattice mismatch between the substrate and the film relaxes gradually with depth. A critical thickness of about 30 nm for sharp strain relaxation is observed. The dislocation density, which forms to relax the lattice strain, is estimated to be about 108cm-2according to the high resolution x-ray diffraction. The edge dislocation density is slightly larger than that of the screw ones.

AB - High quality SrTiO3thin film on (1 1 0) DyScO3substrate is grown by laser molecular beam epitaxy. The lattice strain resulting from the lattice mismatch between the substrate and the film relaxes gradually with depth. A critical thickness of about 30 nm for sharp strain relaxation is observed. The dislocation density, which forms to relax the lattice strain, is estimated to be about 108cm-2according to the high resolution x-ray diffraction. The edge dislocation density is slightly larger than that of the screw ones.

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DO - 10.1088/0022-3727/42/10/105307

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VL - 42

JO - Journal of Physics D: Applied Physics

JF - Journal of Physics D: Applied Physics

IS - 10

M1 - 105307

ER -

Dislocation density and strain distribution in SrTiO₃film grown on (1 1 0) DyScO₃substrate

Abstract

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