Dislocation density and strain distribution in SrTiO3film grown on (1 1 0) DyScO3substrate

Z. Y. Zhai, X. S. Wu, H. L. Cai, X. M. Lu, Jianhua Hao, Ju Gao, W. S. Tan, Q. J. Jia, H. H. Wang, Y. Z. Wang

Research output: Journal article publicationJournal articleAcademic researchpeer-review

22 Citations (Scopus)

Abstract

High quality SrTiO3thin film on (1 1 0) DyScO3substrate is grown by laser molecular beam epitaxy. The lattice strain resulting from the lattice mismatch between the substrate and the film relaxes gradually with depth. A critical thickness of about 30 nm for sharp strain relaxation is observed. The dislocation density, which forms to relax the lattice strain, is estimated to be about 108cm-2according to the high resolution x-ray diffraction. The edge dislocation density is slightly larger than that of the screw ones.
Original languageEnglish
Article number105307
JournalJournal of Physics D: Applied Physics
Volume42
Issue number10
DOIs
Publication statusPublished - 18 Sep 2009

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Acoustics and Ultrasonics
  • Surfaces, Coatings and Films

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