Directional edge-emitting UV random laser diodes

Eunice S.P. Leong, Siu Fung Yu, Shu Ping Lau

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92 Citations (Scopus)

Abstract

The authors have achieved directional coherent random lasing from p-GaNi-ZnO-Si O2 nanocomposite/ n-ZnO heterojunction diodes. This is due to the use of relatively low refractive indexed carrier injection layers (i.e., cladding layers) and relatively high refractive indexed intrinsic layer with stripes of ZnO clusters (i.e., core layer) that allows the transverse confinement of in-plane closed-loop random cavities. Hence, directional lasing emission can be observed from the edge of the diodes. However, the choice of highly concentrated ZnO clusters, which is supposed to enhance the transverse confinement and optical gain, is not preferred for the fabrication of intrinsic layer. This is because the influence of corrugation effect (i.e., strong surface scattering) supersedes the transverse optical confinement of the diodes.
Original languageEnglish
Article number221109
JournalApplied Physics Letters
Volume89
Issue number22
DOIs
Publication statusPublished - 7 Dec 2006
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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