Directional and controllable edge-emitting ZnO ultraviolet random laser diodes

H. K. Liang, Siu Fung Yu, H. Y. Yang

Research output: Journal article publicationJournal articleAcademic researchpeer-review

100 Citations (Scopus)


Roomerature ultraviolet random lasing action is demonstrated from a p-GaN /annealed i-ZnO:Al (3%) /n-ZnO:Al (5%) buried heterojunction diode with a 2 μm rib waveguide. Excellent electrical-to-optical conversion efficiency is achieved by strong electrical and optical confinement of a buried heterojunction rib waveguide structure. Hence, emission intensity (threshold current) can be enhanced (reduced) by ∼9 times (∼40%). Directional emission as well as controllability on the number of the random lasing modes can also be achieved.
Original languageEnglish
Article number101116
JournalApplied Physics Letters
Issue number10
Publication statusPublished - 26 Mar 2010
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)


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