Roomerature ultraviolet random lasing action is demonstrated from a p-GaN /annealed i-ZnO:Al (3%) /n-ZnO:Al (5%) buried heterojunction diode with a 2 μm rib waveguide. Excellent electrical-to-optical conversion efficiency is achieved by strong electrical and optical confinement of a buried heterojunction rib waveguide structure. Hence, emission intensity (threshold current) can be enhanced (reduced) by ∼9 times (∼40%). Directional emission as well as controllability on the number of the random lasing modes can also be achieved.
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)