Directional and controllable edge-emitting ZnO ultraviolet random laser diodes

H. K. Liang; Siu Fung Yu; H. Y. Yang

doi:10.1063/1.3356221

Directional and controllable edge-emitting ZnO ultraviolet random laser diodes

H. K. Liang, Siu Fung Yu, H. Y. Yang

Research output: Journal article publication › Journal article › Academic research › peer-review

100 Citations (Scopus)

Abstract

Roomerature ultraviolet random lasing action is demonstrated from a p-GaN /annealed i-ZnO:Al (3%) /n-ZnO:Al (5%) buried heterojunction diode with a 2 μm rib waveguide. Excellent electrical-to-optical conversion efficiency is achieved by strong electrical and optical confinement of a buried heterojunction rib waveguide structure. Hence, emission intensity (threshold current) can be enhanced (reduced) by ∼9 times (∼40%). Directional emission as well as controllability on the number of the random lasing modes can also be achieved.

Original language	English
Article number	101116
Journal	Applied Physics Letters
Volume	96
Issue number	10
DOIs	https://doi.org/10.1063/1.3356221
Publication status	Published - 26 Mar 2010
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.3356221

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AB - Roomerature ultraviolet random lasing action is demonstrated from a p-GaN /annealed i-ZnO:Al (3%) /n-ZnO:Al (5%) buried heterojunction diode with a 2 μm rib waveguide. Excellent electrical-to-optical conversion efficiency is achieved by strong electrical and optical confinement of a buried heterojunction rib waveguide structure. Hence, emission intensity (threshold current) can be enhanced (reduced) by ∼9 times (∼40%). Directional emission as well as controllability on the number of the random lasing modes can also be achieved.

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Directional and controllable edge-emitting ZnO ultraviolet random laser diodes

Abstract

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