Directional and controllable edge-emitting ZnO ultraviolet random laser diodes

H. K. Liang, Siu Fung Yu, H. Y. Yang

Research output: Journal article publicationJournal articleAcademic researchpeer-review

91 Citations (Scopus)

Abstract

Roomerature ultraviolet random lasing action is demonstrated from a p-GaN /annealed i-ZnO:Al (3%) /n-ZnO:Al (5%) buried heterojunction diode with a 2 μm rib waveguide. Excellent electrical-to-optical conversion efficiency is achieved by strong electrical and optical confinement of a buried heterojunction rib waveguide structure. Hence, emission intensity (threshold current) can be enhanced (reduced) by ∼9 times (∼40%). Directional emission as well as controllability on the number of the random lasing modes can also be achieved.
Original languageEnglish
Article number101116
JournalApplied Physics Letters
Volume96
Issue number10
DOIs
Publication statusPublished - 26 Mar 2010
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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