Direct growth of hexagonal InN films on 6H-SiC by radio-frequency metal-organic molecular-beam epitaxy

Keyphrases

• Radio Frequency 100%
• 6H-SiC 100%
• InN Films 100%
• Direct Growth 100%
• Organic Molecular Beam Deposition 100%
• Metal-organic Materials 100%
• Growth Temperature 75%
• Optical Properties 50%
• 6H-SiC Wafer 50%
• Microstructure 25%
• Field Emission Scanning Electron Microscopy (FE-SEM) 25%
• Structural Properties 25%
• Diffraction 25%
• Transmission Electron Microscopy 25%
• Crystallinity 25%
• Buffer Layer 25%
• Growth Form 25%
• Photoluminescence Spectra 25%
• Electrical Properties 25%
• Electron Transmission 25%
• Lattice Mismatch 25%
• Room-temperature Photoluminescence 25%
• C-axis Orientation 25%
• Epitaxial Growth 25%
• Plasma-assisted 25%
• Epitaxially Grown 25%
• Emission Peak 25%
• Photoluminescence Measurements 25%
• Wurtzite InN 25%
• Hall Measurement 25%
• Scanning Electron Microscope Image 25%
• Diffraction Field 25%
• Two-dimensional Growth 25%
• Self-design 25%
• Grain Coalescence 25%
• Burstein-Moss Effect 25%

Engineering

• Radio Frequency 100%
• Growth Temperature 100%
• Ray Diffraction 66%
• Two Dimensional 33%
• Field-Emission Scanning Electron Microscopy 33%
• Growth Mode 33%
• Engineering 33%
• Thin Films 33%
• Crystallinity 33%
• Room Temperature 33%
• Emission Peak 33%
• Buffer Layer 33%
• Lattice Mismatch 33%
• Scanning Electron Microscope 33%

Material Science

• Molecular Beam Epitaxy 100%
• Film 100%
• Photoluminescence 50%
• Optical Property 50%
• Field Emission Scanning Electron Microscopy 25%
• Scanning Electron Microscopy 25%
• Epitaxy 25%
• Lattice Mismatch 25%
• Buffer Layer 25%
• Transmission Electron Microscopy 25%
• Thin Films 25%