Dielectric tunability and magnetoelectric coupling in LuFe2O4epitaxial thin film deposited by pulsed-laser deposition

M. Zeng, J. Liu, Y. B. Qin, H. X. Yang, J. Q. Li, Jiyan Dai

Research output: Journal article publicationJournal articleAcademic researchpeer-review

9 Citations (Scopus)


C-axis orientated LuFe2O4thin films on (001) sapphire substrates are epitaxially deposited by pulsed-laser deposition. Temperature-dependent resistance characterization reveals the ferrimagnetic transition at 237 K and charge-ordering transition at 340 K in the film. Importantly, the dielectric constant of the film can be significantly changed by both electric and magnetic fields. The dielectric tunability reaches 35% when an electric field of 5 V is applied, while this value reduces to 20% and 15%, respectively, when a magnetic field of 0.83 T is applied perpendicular and parallel to the film normal direction. This suggests a magnetically controlled dielectric tunability and strong magnetoelectric coupling, and is therefore promising for tunable device applications in film form.
Original languageEnglish
Pages (from-to)6446-6449
Number of pages4
JournalThin Solid Films
Issue number20
Publication statusPublished - 1 Aug 2012


  • Charge-Ordering
  • Dielectric tunability
  • Lutetium ferrite
  • Magnetoelectric coupling
  • Multiferroics
  • Pulsed-laser deposition
  • X-ray diffraction

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

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