Dielectric transition of nanostructured diamond films

Haitao Ye, Chang Q. Sun, Haitao Huang, Peter Hing

Research output: Journal article publicationJournal articleAcademic researchpeer-review

45 Citations (Scopus)

Abstract

The dielectric behavior of nanostructured diamond films has been investigated by using an impedance analyzer up to 500°C. Impedance data are presented in the form of the Cole-Cole plot. It is found that: (i) the resistivity contributed both from bulk grain interior and grain boundary decreases with increasing temperature; (ii) above 250°C, the impurities at grain boundaries are thermally activated, and thus contribute to the dielectric relaxation; and (iii) the electrical conductivity of diamond films follows an Arrhenius law with an activation energy transition from 0.13 to 0.67 eV at 250°C. Similar activation energy is found for the Arrhenius plot of relaxation frequencies from 0.14 to 0.73 eV. The dielectric transition is explained as the change of crystal field caused by the thermal expansion or by surface bond contraction of nanosized particles.
Original languageEnglish
Pages (from-to)1826-1828
Number of pages3
JournalApplied Physics Letters
Volume78
Issue number13
DOIs
Publication statusPublished - 26 Mar 2001
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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