Abstract
A study was performed on the dielectric relaxation and transition of porous silicon. The dielectric impedance measurements revealed three semicircles in a Cole-Cole plot when the temperature was raised to 773 K. It was found that at critical temperature, a high degree of dispersion in the real and imaginary parts of the permittivity occurred at low frequencies.
| Original language | English |
|---|---|
| Pages (from-to) | 2695-2700 |
| Number of pages | 6 |
| Journal | Journal of Applied Physics |
| Volume | 94 |
| Issue number | 4 |
| DOIs | |
| Publication status | Published - 15 Aug 2003 |
| Externally published | Yes |
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)
- General Physics and Astronomy