Dielectric relaxation and transition of porous silicon

L. K. Pan, Haitao Huang, Chang Q. Sun

Research output: Journal article publicationJournal articleAcademic researchpeer-review

51 Citations (Scopus)


A study was performed on the dielectric relaxation and transition of porous silicon. The dielectric impedance measurements revealed three semicircles in a Cole-Cole plot when the temperature was raised to 773 K. It was found that at critical temperature, a high degree of dispersion in the real and imaginary parts of the permittivity occurred at low frequencies.
Original languageEnglish
Pages (from-to)2695-2700
Number of pages6
JournalJournal of Applied Physics
Issue number4
Publication statusPublished - 15 Aug 2003
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)
  • General Physics and Astronomy


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