Dielectric properties of (Ba0.5Sr0.5)TiO3thin films

Feng Yan; Peng Bao; Zhigang Zhang; Jinsong Zhu; Yening Wang; Helen L.W. Chan; Chung Loong Choy

doi:10.1016/S0040-6090(00)01230-X

Dielectric properties of (Ba_0.5Sr_0.5)TiO₃thin films

Feng Yan, Peng Bao, Zhigang Zhang, Jinsong Zhu, Yening Wang, Helen L.W. Chan, Chung Loong Choy

Research output: Journal article publication › Journal article › Academic research › peer-review

25 Citations (Scopus)

Abstract

The dielectric properties of (Ba0.5Sr0.5)TiO3(BST) thin films with high electrical resistivity were investigated. BST films are deposited on Pt/TiO2/SiO2/Si substrates by a metal-organic deposition (MOD) method. The dielectric permittivity and ac conductivity of the films are measured in the frequency range 102-105 Hz. The dielectric permittivity εrdecreases slightly with frequency f, following the relationship εr= a+bfn-1(a, b and n are constants, n<1). The ac conductivity σ(f) increases with frequency as σ(f) to approximately fn. These results indicate that the phonon-assisted jumps of electrons between localized states play an important role in the dielectric properties of BST thin films. The dielectric permittivity and ac conductivity of the BST thin films increase with grain size, and decrease with increasing temperature. A preliminary explanation is given.

Original language	English
Pages (from-to)	184-187
Number of pages	4
Journal	Thin Solid Films
Volume	375
Issue number	1-2
DOIs	https://doi.org/10.1016/S0040-6090(00)01230-X
Publication status	Published - 31 Oct 2000

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Surfaces and Interfaces
Surfaces, Coatings and Films
Metals and Alloys
Materials Chemistry

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10.1016/S0040-6090(00)01230-X

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title = "Dielectric properties of (Ba0.5Sr0.5)TiO3thin films",

abstract = "The dielectric properties of (Ba0.5Sr0.5)TiO3(BST) thin films with high electrical resistivity were investigated. BST films are deposited on Pt/TiO2/SiO2/Si substrates by a metal-organic deposition (MOD) method. The dielectric permittivity and ac conductivity of the films are measured in the frequency range 102-105 Hz. The dielectric permittivity εrdecreases slightly with frequency f, following the relationship εr= a+bfn-1(a, b and n are constants, n<1). The ac conductivity σ(f) increases with frequency as σ(f) to approximately fn. These results indicate that the phonon-assisted jumps of electrons between localized states play an important role in the dielectric properties of BST thin films. The dielectric permittivity and ac conductivity of the BST thin films increase with grain size, and decrease with increasing temperature. A preliminary explanation is given.",

author = "Feng Yan and Peng Bao and Zhigang Zhang and Jinsong Zhu and Yening Wang and Chan, {Helen L.W.} and Choy, {Chung Loong}",

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T1 - Dielectric properties of (Ba0.5Sr0.5)TiO3thin films

AU - Yan, Feng

AU - Bao, Peng

AU - Zhang, Zhigang

AU - Zhu, Jinsong

AU - Wang, Yening

AU - Chan, Helen L.W.

AU - Choy, Chung Loong

PY - 2000/10/31

Y1 - 2000/10/31

N2 - The dielectric properties of (Ba0.5Sr0.5)TiO3(BST) thin films with high electrical resistivity were investigated. BST films are deposited on Pt/TiO2/SiO2/Si substrates by a metal-organic deposition (MOD) method. The dielectric permittivity and ac conductivity of the films are measured in the frequency range 102-105 Hz. The dielectric permittivity εrdecreases slightly with frequency f, following the relationship εr= a+bfn-1(a, b and n are constants, n<1). The ac conductivity σ(f) increases with frequency as σ(f) to approximately fn. These results indicate that the phonon-assisted jumps of electrons between localized states play an important role in the dielectric properties of BST thin films. The dielectric permittivity and ac conductivity of the BST thin films increase with grain size, and decrease with increasing temperature. A preliminary explanation is given.

AB - The dielectric properties of (Ba0.5Sr0.5)TiO3(BST) thin films with high electrical resistivity were investigated. BST films are deposited on Pt/TiO2/SiO2/Si substrates by a metal-organic deposition (MOD) method. The dielectric permittivity and ac conductivity of the films are measured in the frequency range 102-105 Hz. The dielectric permittivity εrdecreases slightly with frequency f, following the relationship εr= a+bfn-1(a, b and n are constants, n<1). The ac conductivity σ(f) increases with frequency as σ(f) to approximately fn. These results indicate that the phonon-assisted jumps of electrons between localized states play an important role in the dielectric properties of BST thin films. The dielectric permittivity and ac conductivity of the BST thin films increase with grain size, and decrease with increasing temperature. A preliminary explanation is given.

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DO - 10.1016/S0040-6090(00)01230-X

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VL - 375

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EP - 187

JO - Thin Solid Films

JF - Thin Solid Films

IS - 1-2

ER -

Dielectric properties of (Ba_0.5Sr_0.5)TiO₃thin films

Abstract

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