Dielectric properties of (Ba0.5Sr0.5)TiO3thin films

Feng Yan, Peng Bao, Zhigang Zhang, Jinsong Zhu, Yening Wang, Helen L.W. Chan, Chung Loong Choy

Research output: Journal article publicationJournal articleAcademic researchpeer-review

25 Citations (Scopus)


The dielectric properties of (Ba0.5Sr0.5)TiO3(BST) thin films with high electrical resistivity were investigated. BST films are deposited on Pt/TiO2/SiO2/Si substrates by a metal-organic deposition (MOD) method. The dielectric permittivity and ac conductivity of the films are measured in the frequency range 102-105 Hz. The dielectric permittivity εrdecreases slightly with frequency f, following the relationship εr= a+bfn-1(a, b and n are constants, n<1). The ac conductivity σ(f) increases with frequency as σ(f) to approximately fn. These results indicate that the phonon-assisted jumps of electrons between localized states play an important role in the dielectric properties of BST thin films. The dielectric permittivity and ac conductivity of the BST thin films increase with grain size, and decrease with increasing temperature. A preliminary explanation is given.
Original languageEnglish
Pages (from-to)184-187
Number of pages4
JournalThin Solid Films
Issue number1-2
Publication statusPublished - 31 Oct 2000

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry


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