Dielectric properties of Ba0.6 Sr0.4 Ti O3 thin films using Pb0.3 Sr0.7 Ti O3 buffer layers

Keyphrases

• Dielectric Properties 100%
• Buffer Layer 100%
• Si Substrate 33%
• Room Temperature 33%
• Annealing 33%
• Tunability 33%
• Permittivity 33%
• Integrated Device 33%
• Device Application 33%
• Pt Electrode 33%
• Loss Tangent 33%
• Bias Field 33%
• Multilayered Films 33%
• Interface Contact 33%
• Applied Bias 33%
• Capacitor Structure 33%

Material Science

• Buffer Layer 100%
• Dielectric Property 100%
• Film 100%
• Thin Films 100%
• Capacitor 20%
• Permittivity 20%