Dielectric properties of Ba0.6 Sr0.4 Ti O3 thin films using Pb0.3 Sr0.7 Ti O3 buffer layers

Sheng Xiang Wang, Jianhua Hao, Zhen Ping Wu, Dan Yang Wang, Yue Zhuo, Xing Zhong Zhao

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Abstract

Ba0.6 Sr0.4 Ti O3 (BST) thin films buffered with Pb0.3 Sr0.7 Ti O3 (PST) at each side of the interface contact with electrodes (PST/BST/PST) were deposited on PtTiSi O2 Si substrates. The dielectric properties of the films were measured using planar PtPSTBSTPSTPtTiSi O2 Si capacitor structures. The existence of a PST layer between the BST and Pt electrode can improve the dielectric properties of the BST film. The loss tangent of the multilayered films annealed at 750 °C was found to be 0.016 at 1 MHz and room temperature. The films showed a ∼31.7% tunability of the permittivity at an applied bias field of 0.85 MVcm. This suggests that such films have potential applications for integrated device applications.
Original languageEnglish
Article number252908
JournalApplied Physics Letters
Volume91
Issue number25
DOIs
Publication statusPublished - 1 Dec 2007

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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