Ba0.6 Sr0.4 Ti O3 (BST) thin films buffered with Pb0.3 Sr0.7 Ti O3 (PST) at each side of the interface contact with electrodes (PST/BST/PST) were deposited on PtTiSi O2 Si substrates. The dielectric properties of the films were measured using planar PtPSTBSTPSTPtTiSi O2 Si capacitor structures. The existence of a PST layer between the BST and Pt electrode can improve the dielectric properties of the BST film. The loss tangent of the multilayered films annealed at 750 °C was found to be 0.016 at 1 MHz and room temperature. The films showed a ∼31.7% tunability of the permittivity at an applied bias field of 0.85 MVcm. This suggests that such films have potential applications for integrated device applications.
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)